Infineon IRF9Z24NPBF

MOSFET, Power;P-Ch;VDSS -55V;RDS(ON) 0.175Ohm;ID -12A;TO-220AB;PD 45W;VGS +/-20V

Single P-Channel 55 V 0.175 Ohm 19 nC HEXFET® Power Mosfet - TO-220-3

MOSFET P-CH 55V 12A TO220AB P-Channel 55 V 12A (Tc) 45W (Tc) Through Hole TO-220AB

-55V Single P-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

Trans MOSFET P-CH 55V 12A 3-Pin(3+Tab) TO-220AB

Power Field-Effect Transistor, 12A I(D), 55V, 0.175ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

Transistor Polarity = P-Channel / Configuration = Single / Continuous Drain Current (Id) A = -12 / Drain-Source Voltage (Vds) V = -55 / ON Resistance (Rds(on)) mOhm = 175 / Gate-Source Voltage V = 20 / Fall Time ns = 37 / Rise Time ns = 55 / Turn-OFF Delay Time ns = 23 / Turn-ON Delay Time ns = 13 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-220AB / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Power Dissipation (Pd) W = 45

MOSFET, P, -55V, -12A, TO-220; Transistor Polarity:P Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:55V; On Resistance Rds(on):172mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-4V; Power Dissipation Pd:45W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:-12A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:3.3°C/W; Lead Spacing:2.54mm; No. of Transistors:1; Package / Case:TO-220AB; Pin Configuration:a; Pin Format:1 g; 2 d/tab; 3 s; Power Dissipation Pd:45W; Power Dissipation Pd:45W; Pulse Current Idm:48A; Termination Type:Through Hole; Voltage Vds:55V; Voltage Vds Typ:-55V; Voltage Vgs Max:-4V; Voltage Vgs Rds on Measurement:-10V