Infineon IRF9953TRPBF

Name: Infineon IRF9953TRPBF
Brand: Infineon
SKU: IRF9953TRPBF

Transistor MOSFET Array Dual P-CH 30V 2.3A 8-Pin SOIC T/R

$ 0.465

Obsolete

Manufacturer Page Datasheet

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Distributor		SKU		Min	Pkg
RS (Formerly Allied Electronics)		IRF9953TRPBF	0	20	Bulk			0.486	0.465	0.465	14h
Farnell	2	IRF9953TRPBF	0	1	Cut Tape	1.058*	0.891*	0.629*	0.497*	0.497*	13h
Microchip USA		IRF9953	357	600	Tube				1.250	1.250	4d
Component Stockers USA		IRF9953TRPBF	578			99.990	99.990	99.990	99.990	99.990	>1wk
Win Source	2	WS-IRF9953TRPBF	2,710	105					0.380	0.380	2h

CAD Models

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Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRF9953TRPBF.

Newark

Datasheet7 pages21 years ago

IHS

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Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date1996-11-08

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2022-10-15

LTD Date2023-04-15

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Descriptions

Descriptions of Infineon IRF9953TRPBF provided by its distributors.

Transistor MOSFET Array Dual P-CH 30V 2.3A 8-Pin SOIC T/R

Avnet Japan

Power MOSFET(Vdss=-30V, Rds(on)=0.25ohm) | MOSFET 2P-CH 30V 2.3A 8-SOIC

Win Source

Dual P-Channel 30 V 0.4 Ohm 12 nC HEXFET® Power Mosfet - SOIC-8

Future Electronics

Trans MOSFET P-CH Si 30V 2.3A 8-Pin SOIC T/R

Verical

MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual P Channel; Drain Source Voltage, Vds:-30V; Continuous Drain Current, Id:-2.3A; On Resistance, Rds(on):250mohm; Rds(on) Test Voltage, Vgs:-10V; Leaded Process Compatible:Yes RoHS Compliant: Yes

Newark

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

Infineon

Transistor Polarity = P-Channel / Configuration = Dual / Continuous Drain Current (Id) A = -2.3 / Drain-Source Voltage (Vds) V = -30 / ON Resistance (Rds(on)) mOhm = 250 / Gate-Source Voltage V = 20 / Fall Time ns = 6.9 / Rise Time ns = 14 / Turn-OFF Delay Time ns = 20 / Turn-ON Delay Time ns = 9.7 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SO-8 / Pins = 8 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 2

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