Infineon IRF8915TRPBF

Name: Infineon IRF8915TRPBF
Brand: Infineon
SKU: IRF8915TRPBF

Dual N-Channel 20 V 18.3 mOhm 4.9 nC HEXFET® Power Mosfet - SOIC-8

$ 0.801

Obsolete

Datasheet

Manufacturer Page

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

See all price breaks

Distributor

SKU

Min

Pkg

Bulk Pricing

Rochester Electronics

USD

14h

RS (Formerly Allied Electronics)

IRF8915TRPBF

Bulk

USD

600

Tube

USD

15h

135

USD

0.365

0.327

15h

Inventory History

3 month trend: -0.20%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRF8915TRPBF.

element14 APAC

Datasheet10 pages18 years ago

_legacy Avnet

DigiKey

Newark

iiiC

Inventory History

3 month trend:

-0.20%

CAD Models

Download Infineon IRF8915TRPBF symbol, footprint, and 3D STEP models from our trusted partners.

source	eCAD	mCAD	FILES
Component Search Engine	SymbolFootprint	3D	Download
EE Concierge	SymbolFootprint

The partner site will open in a new tab when downloading their CAD models

By downloading CAD models from Octopart, you agree to our Terms & Conditions and Privacy Policy.

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2004-03-31

Lifecycle StatusObsolete (Last Updated: 2 months ago)

LTB Date2008-03-13

LTD Date2008-09-13

Related Parts

InfineonIRF8910TRPBF

Dual N-Channel 20 V 13.4 mOhm 7.4 nC HEXFET® Power Mosfet - SOIC-8

Details

InfineonIRF8910PBF

Dual N-Channel 20 V 2 W 7.4 nC Hexfet Power Mosfet Surface Mount - SOIC-8

Details

onsemiFDS6898A

Dual N-Channel Logic Level PWM Optimized PowerTrench® MOSFET 20V, 9.4A, 14mΩ

Details

onsemiFDS6898AZ

Dual N-Channel Logic Level PWM Optimized PowerTrench® MOSFET 20V, 9.4A, 14mΩ

Details

onsemiFDS6576

P-Channel PowerTrench® MOSFET, 2.5V Specified, -20V, -11A, 14mΩ

Details

VishaySI9926CDY-T1-GE3

Transistor: 2xN-MOSFET; unipolar; 20V; 8A; 0.018ohm; 2W; -55+150 deg.C; SMD; SO8

Details

Descriptions

Descriptions of Infineon IRF8915TRPBF provided by its distributors.

Dual N-Channel 20 V 18.3 mOhm 4.9 nC HEXFET® Power Mosfet - SOIC-8

Future Electronics

Transistor MOSFET Array Dual N-CH 20V 8.9A 8-Pin SOIC T/R

Avnet

Power Field-Effect Transistor, 8.9A I(D), 20V, 0.0183ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

IHS

2W 20V 2.5V@ 250µA 7.4nC@ 4.5V 2individualNChannel 20V 18.3mΩ@ 8.9A,10V 8.9A 540pF@10V SOIC-8 SMD mount 4.9mm*3.9mm*1.75mm

UnikeyIC

MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual N Channel; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:8.9A; On Resistance, Rds(on):18.3mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:8-SOIC ;RoHS Compliant: Yes

Newark

The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Infineon

Transistor Polarity = N-Channel / Configuration = Dual / Continuous Drain Current (Id) A = 8.9 / Drain-Source Voltage (Vds) V = 20 / ON Resistance (Rds(on)) mOhm = 18.3 / Gate-Source Voltage V = 20 / Fall Time ns = 3.6 / Rise Time ns = 12 / Turn-OFF Delay Time ns = 7.1 / Turn-ON Delay Time ns = 6 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SO-8 / Pins = 8 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 2

Distrelec