Infineon IRF8721TRPBF

Name: Infineon IRF8721TRPBF
Brand: Infineon
SKU: IRF8721TRPBF

Single N-Channel 30V 8.5 mOhm 8.3 nC HEXFET® Power Mosfet - SOIC-8

$ 0.23

Obsolete

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

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Distributor		SKU		Min	Pkg
Arrow Electronics		IRF8721TRPBF	1	1		0.205	0.205	0.205	0.205	0.205
Rochester Electronics		IRF8721TRPBF	92					0.277	0.230	0.205	9h
RS (Formerly Allied Electronics)		IRF8721TRPBF	0	20	Bulk			0.560	0.540	0.540	22h
Avnet		IRF8721TRPBF	0	4K							11h
Farnell	2	IRF8721TRPBF	0	1	Cut Tape	0.952*	0.808*	0.567*	0.360*	0.353*	9h

Inventory History

3 month trend: -85.77%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRF8721TRPBF.

IHS

Datasheet10 pages18 years ago

Datasheet11 pages18 years ago

TME

Newark

iiiC

Inventory History

3 month trend:

-85.77%

CAD Models

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Alternate Parts

This Part

Alternate Parts

InfineonIRF8721TRPBF

InfineonIRF8721PBF

Price @ 1000

$ 0.23

$ 0.815

Stock

504,087

112,056

Authorized Distributors

Mount

Surface Mount

Case/Package

SOIC

Drain to Source Voltage (Vdss)

30 V

Continuous Drain Current (ID)

14 A

Threshold Voltage

2.35 V

Rds On Max

8.5 mΩ

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

2.5 W

Input Capacitance

1.04 nF

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2007-07-30

Lifecycle StatusObsolete (Last Updated: 3 months ago)

LTB Date2025-12-31

LTD Date2026-12-31

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Descriptions

Descriptions of Infineon IRF8721TRPBF provided by its distributors.

Single N-Channel 30V 8.5 mOhm 8.3 nC HEXFET® Power Mosfet - SOIC-8

Future Electronics

MOSFET, N Ch., 30V, 14A, 8.5 MOHM, 8.3 NC QG, SO-8, Pb-Free

RS (Formerly Allied Electronics)

Trans MOSFET N-CH 30V 14A 8-Pin SOIC T/R

Avnet

Power Field-Effect Transistor, 14A I(D), 30V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

Semicontronic

Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:14A; On Resistance Rds(On):0.0069Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.35V Rohs Compliant: Yes

Newark