Infineon IRF830PBF
$ 0.963
Inventory History
3 month trend: +0.00%
CAD Models
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Alternate Parts
0 parts available
CAD Models
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Descriptions
Descriptions of Infineon IRF830PBF provided by its distributors.
MOSFET N-CH 500V 4.5A TO220AB N-Channel 500 V 4.5A (Tc) 74W (Tc) Through Hole TO-220AB
Trans MOSFET N-CH 500V 4.5A 3-Pin(3+Tab) TO-220AB
Power Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
74W(Tc) 20V 4V@ 250µA 38nC@ 10 V 1individualNChannel 500V 1.5Ω@ 2.7A,10V 4.5A 610pF@25V TO-220AB Through hole mounting
Manufacturer Aliases
Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Inventory History
3 month trend: +0.00%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-220AB
Number of Terminals3
Technical
Continuous Drain Current (ID)4.5 A
Current Rating4.5 A
Drain to Source Breakdown Voltage500 V
Drain to Source Resistance1.5 Ω
Drain to Source Voltage (Vds)500 V
Gate to Source Voltage (Vgs)20 V
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation75 W
Min Breakdown Voltage500 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingBulk
Power Dissipation74 W
Turn-Off Delay Time42 ns
Turn-On Delay Time8.2 ns
Voltage Rating (DC)500 V
Dimensions
Height19.3 mm
Compliance
Environmental Classification
Lead FreeLead Free
REACH SVHCUnaffected
RoHSCompliant
Compliance Statements