Infineon IPD80R1K0CEATMA1

Name: Infineon IPD80R1K0CEATMA1
Brand: Infineon
SKU: IPD80R1K0CEATMA1

Transistor, Mosfet, 800V Coolmos Ce Power, N-channel, 800V, 18A, TO252

$ 0.607

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Distributor		SKU		Min	Pkg
Future Electronics	2	IPD80R1K0CEATMA1	2,500	2500	Tape & Reel					0.525
Rutronik		TMOS1439	2,500	2500						0.602	23h
Rochester Electronics		IPD80R1K0CEATMA1	22,500					0.720	0.598	0.533	16h
RS (Formerly Allied Electronics)		IPD80R1K0CEATMA1	10	1	Bulk	0.260	0.260	0.260	0.260	0.260	5h
Arrow Electronics		IPD80R1K0CEATMA1	2,500	2500						0.617

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CAD Models

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Datasheets & Documents

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IHS

Datasheet15 pages0 years ago

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Supply Chain

Country of OriginGermany, Mainland China, Malaysia

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2011-01-20

Lifecycle StatusProduction (Last Updated: 1 month ago)

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Descriptions

Descriptions of Infineon IPD80R1K0CEATMA1 provided by its distributors.

TRANSISTOR, MOSFET, 800V COOLMOS CE POWER, N-CHANNEL, 800V, 18A, TO252

RS (Formerly Allied Electronics)

N-Channel 800 V 0.95 O 31 nC CoolMOS CE Power Transistor - DPAK

Future Electronics

Power Field-Effect Transistor, 5.7A I(D), 800V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

IHS

MOSFET, N-CH, 800V, 5.7A, TO-252-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 5.7A; Drain Source Voltage Vds: 800V; On Resistance Rds(on): 0.8ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 83W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: CoolMOS CE Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

Farnell

800V CoolMOS CE is Infineons high performance device family offering 800 volts break down voltage. The CE targets consumer electronics applications as well as Lighting. The new 800V selection series specifically aims at LED applications. With this specific CoolMOS family, Infineon combines long experience as the leading superjunction MOSFET supplier with best-in-class innovation. | Summary of Features: Low specific on-state resistance (R DS(on)*A); Very low energy storage in output capacitance (E oss) @ 400V; Low gate charge (Q g); Field-proven CoolMOS quality; CoolMOS technology has been manufactured by Infineon since 1998 | Benefits: High efficiency and power density; Outstanding price/performance; High reliability; Ease-of-use | Target Applications: LED lighting

Infineon