Infineon IRF7907PBF

Name: Infineon IRF7907PBF
Brand: Infineon
SKU: IRF7907PBF

MOSFET, Power; N-Ch; VDSS 30V; ID 9.1 A (Control FET), 11 A (Synchronous FET); SO-8

Obsolete

Manufacturer Page Datasheet

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Distributor	SKU		Min	Pkg
RS (Formerly Allied Electronics)	IRF7907PBF	0	3800	Bulk					1.313	2h
Farnell	IRF7907PBF	0	1		1.036*	1.036*	0.663*	0.468*	0.468*	11h
Win Source	WS-IRF7907PBF	4,406	150					0.258	0.224	11h
Worldway Electronics	IRF7907PBF	18,245	7	Tube		0.371	0.360	0.341	0.341	11h
ICPartonline	IRF7907PBF	13,905			0.494	0.469	0.444	0.419	0.395	>1wk

CAD Models

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Alternate Parts

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Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRF7907PBF.

IHS

Datasheet10 pages17 years ago

Datasheet11 pages17 years ago

RS (Formerly Allied Electronics)

iiiC

DigiKey

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Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2006-01-04

Lifecycle StatusObsolete (Last Updated: 4 months ago)

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Descriptions

Descriptions of Infineon IRF7907PBF provided by its distributors.

MOSFET, Power;N-Ch;VDSS 30V;ID 9.1 A (Control FET), 11 A (Synchronous FET);SO-8

RS (Formerly Allied Electronics)

Trans MOSFET N-CH 30V 9.1A/11A 8-Pin SOIC T/R

Avnet

30V Dual N-Channel HEXFET Power MOSFET in a Lead Free SO-8 package, SO8, RoHS

Infineon SCT

HEXFET Power MOSFET Power Field-Effect Transistor, 11A I(D), 30V, 0.0118ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

ComSIT Distribution GmbH

Benefits: RoHS Compliant; Low RDS(on); Low Thermal resistance to PCB; Compatible with Existing Surface Mount Techniques; Low RDS(ON) at 4.5V VGS; Very Low Gate Charge; Dual N-Channel MOSFET

Infineon

MOSFET, NN; Transistor Type:MOSFET; Transistor Polarity:Dual N; Voltage, Vds Typ:30V; Current, Id Cont:11A; Resistance, Rds On:11.8mohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:1.8V; Case Style:SOIC; Termination Type:SMD; Current, Id Cont N Channel 2:9.1A; Current, Id Cont N Channel 3:11A; Resistance, Rds on N Channel 1:13.7ohm; Resistance, Rds on N Channel 2:9.8ohm

Farnell

MOSFET,NN CH,30V,9.1A,SO8; Transistor Polarity:N Channel; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:2W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:11A; Drain Source Voltage Vds:30V; Module Configuration:Dual; On Resistance Rds(on):9.8mohm; Power Dissipation Pd:2W

element14 APAC