Infineon IRF7416PBF

Name: Infineon IRF7416PBF
Brand: Infineon
SKU: IRF7416PBF

Mosfet, Power; P-ch; Vdss -30V; Rds(on) 0.02 Ohm; Id -10A; SO-8; Pd 2.5W; Vgs +/-20V; -55

Obsolete

Manufacturer Page Datasheet

Price and Stock

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Distributor	SKU		Min	Pkg
RS (Formerly Allied Electronics)	IRF7416PBF	0	3800	Bulk					1.010	1d
Farnell	IRF7416PBF	0	5			0.903*	0.620*	0.432*	0.424*	16h
Win Source	WS-IRF7416PBF	45,240	185					0.228	0.211	17h
Worldway Electronics	IRF7416PBF	18,268	7	Tube		0.095	0.092	0.088	0.088	16h
ICPartonline	IRF7416PBF	28,643			0.475	0.452	0.428	0.404	0.380	>1wk

CAD Models

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Alternate Parts

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Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRF7416PBF.

Newark

Datasheet9 pages14 years ago

Datasheet9 pages20 years ago

IHS

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iiiC

RS (Formerly Allied Electronics)

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Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date1997-08-08

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2018-12-15

LTD Date2019-06-15

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Descriptions

Descriptions of Infineon IRF7416PBF provided by its distributors.

MOSFET, Power;P-Ch;VDSS -30V;RDS(ON) 0.02Ohm;ID -10A;SO-8;PD 2.5W;VGS +/-20V;-55

RS (Formerly Allied Electronics)

Transistor: P-MOSFET; unipolar; -30V; -10A; 0.02ohm; 2.5W; -55+150 deg.C; SMD; SO8

Maritex

Single P-Channel 30 V 0.02 Ohm 61 nC HEXFET® Power Mosfet - SOIC-8

Future Electronics

Trans MOSFET P-CH 30V 10A 8-Pin SOIC T/R

Avnet

-30V Single P-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS

Infineon SCT

HEXFET POWER MOSFET Power Field-Effect Transistor, 10A I(D), 30V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

ComSIT Distribution GmbH

Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; P-Channel MOSFET

Infineon

MOSFET, P, LOGIC, SO-8; Transistor Polarity:P Channel; Continuous Drain Current Id:8.8A; Drain Source Voltage Vds:30V; On Resistance Rds(on):20mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:-1V; Power Dissipation Pd:2.5W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:-10A; Current Temperature:25°C; External Depth:5.2mm; External Length / Height:1.75mm; External Width:4.05mm; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:SOIC; Pin Configuration:b; Pin Format:1 S; 2 S; 3 S; 4 G; 5 D; 6 D; 7 D; 8 D; Power Dissipation Pd:2.5W; Power Dissipation Pd:2.5W; Pulse Current Idm:45A; Row Pitch:6.3mm; SMD Marking:F7416; Termination Type:SMD; Voltage Vds:30V; Voltage Vds Typ:-30V; Voltage Vgs Max:-1V; Voltage Vgs Rds on Measurement:-10V

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