Infineon IRF7404TRPBF

Name: Infineon IRF7404TRPBF
Brand: Infineon
SKU: IRF7404TRPBF

Mosfet, Power; P-ch; Vdss -20V; Rds(on) 0.04 Ohm; Id -6.7A; SO-8; Pd 2.5W; Vgs +/-12V

$ 0.287

Obsolete

Datasheet

Manufacturer Page

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

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Distributor

SKU

Min

Pkg

Bulk Pricing

Arrow Electronics

IRF7404TRPBF

USD

0.294

RS (Formerly Allied Electronics)

IRF7404TRPBF

Bulk

USD

21h

10h

Weyland Electronics Group Pte. Ltd.

IRF7404TRPBF

10,178

Tape & Reel

USD

USD

3 month trend: -99.38%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRF7404TRPBF.

Newark

Datasheet9 pages21 years ago

IHS

Farnell

RS (Formerly Allied Electronics)

iiiC

Inventory History

3 month trend:

-99.38%

CAD Models

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Supply Chain

Country of OriginMainland China, Philippines, Usa

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date1995-07-01

Lifecycle StatusObsolete (Last Updated: 5 months ago)

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Descriptions

Descriptions of Infineon IRF7404TRPBF provided by its distributors.

MOSFET, Power;P-Ch;VDSS -20V;RDS(ON) 0.04Ohm;ID -6.7A;SO-8;PD 2.5W;VGS +/-12V

RS (Formerly Allied Electronics)

Single P-Channel 20 V 0.06 Ohm 50 nC HEXFET® Power Mosfet - SOIC-8

Future Electronics

-20V Single P-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS

Infineon SCT

HEXFET POWER MOSFET Power Field-Effect Transistor, 5.3A I(D), 20V, 0.04ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

ComSIT Distribution GmbH

MOSFET; Transistor Type:MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-20V; Continuous Drain Current, Id:-6.7A; On Resistance, Rds(on):40mohm; Rds(on) Test Voltage, Vgs:-4.5V; Package/Case:8-SOIC ;RoHS Compliant: Yes

Newark

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.

Infineon

Transistor Polarity = P-Channel / Configuration = Single / Continuous Drain Current (Id) A = -7.7 / Drain-Source Voltage (Vds) V = -20 / ON Resistance (Rds(on)) mOhm = 40 / Gate-Source Voltage V = 12 / Fall Time ns = 65 / Rise Time ns = 32 / Turn-OFF Delay Time ns = 100 / Turn-ON Delay Time ns = 14 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SO-8 / Pins = 8 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 2.5

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