Infineon IRF7342PBF

Name: Infineon IRF7342PBF
Brand: Infineon
SKU: IRF7342PBF

Transistor MOSFET P Channel 55 Volt 3.4 Amp 8 Pin SOIC

$ 0.83

Obsolete

Manufacturer Page Datasheet

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Distributor	SKU		Min	Pkg
RS (Formerly Allied Electronics)	IRF7342PBF	0	1	Bulk	0.950	0.830	0.830	0.830	0.830	14h
Farnell	IRF7342PBF	0	5			0.779*	0.724*	0.448*	0.439*	1d
Win Source	WS-IRF7342PBF	47,200	145					0.282	0.271	1h
Worldway Electronics	IRF7342PBF	11,415	7	Tube		0.092	0.089	0.084	0.084	2h
ICPartonline	IRF7342PBF	6,373			0.572	0.543	0.515	0.486	0.457	>1wk

CAD Models

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Alternate Parts

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Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRF7342PBF.

ODG (Origin Data Global)

Datasheet8 pages9 years ago

IHS

TME

Jameco

iiiC

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Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date1999-03-22

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2018-12-15

LTD Date2019-06-15

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Descriptions

Descriptions of Infineon IRF7342PBF provided by its distributors.

Transistor MOSFET P Channel 55 Volt 3.4 Amp 8 Pin SOIC

Jameco

Transistor: 2xP-MOSFET; unipolar; -55V; -3.4A; 0.105ohm; 2W; -55+150 deg.C; SMD; SO8

Maritex

HEXFET® Power MOSFET (VDSS = -55V , RDS(on) = 0.105Ω) | MOSFET 2P-CH 55V 3.4A 8-SOIC

Win Source

Dual P-Channel 55 V 0.105 Ohm 26 nC HEXFET® Power Mosfet - SOIC-8

Future Electronics

Transistor MOSFET Array Dual P-CH 55V 3.4A 8-Pin SOIC Tube

Avnet

Power Field-Effect Transistor, 3.4A I(D), 55V, 0.105ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

IHS

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.

Infineon

MOSFET, DUAL, PP, LOGIC, SO-8; Module Configuration:Dual; Transistor Polarity:P Channel; Continuous Drain Current Id:3.4A; Drain Source Voltage Vds:55V; On Resistance Rds(on):105mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-1V; Power Dissipation Pd:2W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Capacitance Ciss Typ:690pF; Current Id Max:-3.4A; Current Temperature:25°C; External Depth:5.2mm; External Length / Height:1.75mm; External Width:4.05mm; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; No. of Transistors:2; Package / Case:SOIC; Power Dissipation Pd:2W; Power Dissipation Pd:2W; Pulse Current Idm:27A; Rate of Voltage Change dv / dt:5V/ns; Row Pitch:6.3mm; SMD Marking:F7342; Termination Type:SMD; Voltage Vds:55V; Voltage Vds Typ:-55V; Voltage Vgs Max:-1V; Voltage Vgs Rds on Measurement:-10V; Voltage Vgs th Min:-1V

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