Infineon IRF3710LPBF
$ 1.397
Obsolete
Price and Stock
Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Rochester Electronics | IRF3710LPBF | 46 | 3h | |||||||||
| RS (Formerly Allied Electronics) | IRF3710LPBF | 0 | 5 | Bulk | 17h | |||||||
| Farnell | IRF3710LPBF | 0 | 1 | 3h | ||||||||
| Microchip USA | IRF3710L | 310 | 600 | Tube | 20h | |||||||
| Win Source | WS-IRF3710LPBF | 6,340 | 60 | 4h |
Inventory History
3 month trend: +0.00%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
CAD Models
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Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1997-05-20
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2020-10-31
LTD Date2021-04-30
Related Parts
InfineonIRFSL4510PBF
100V Single N-Channel HEXFET Power MOSFET in a TO-262 package, TO262-3, RoHS
InfineonIRF5210LPBF
MOSFET, Power;P-Ch;VDSS -100V;RDS(ON) 0.06Ohm;ID -40A;TO-262;PD 200W;VGS +/-20V
Descriptions
Descriptions of Infineon IRF3710LPBF provided by its distributors.
Single N-Channel 100 V 23 mOhm 130 nC HEXFET® Power Mosfet - TO-262
100V Single N-Channel HEXFET Power MOSFET in a TO-262 package, TO262-3, RoHS
Infineon SCT
HEXFET POWER MOSFET Power Field-Effect Transistor, 57A I(D), 100V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:100V; Continuous Drain Current, Id:57A; On Resistance, Rds(on):23mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-262 ;RoHS Compliant: Yes
Manufacturer Aliases
Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Inventory History
3 month trend: +0.00%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-262
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)57 A
Current Rating57 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance23 mΩ
Drain to Source Voltage (Vdss)100 V
Element ConfigurationSingle
Fall Time47 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance3.13 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation150 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance23 mΩ
Package Quantity1000
PackagingBulk
Power Dissipation200 W
Rds On Max23 mΩ
Resistance23 MΩ
Rise Time58 ns
Schedule B8541290080
Turn-Off Delay Time45 ns
Turn-On Delay Time12 ns
Voltage Rating (DC)100 V
Dimensions
Height15.1 mm
Length10.668 mm
Width4.826 mm
Compliance
Environmental Classification
Lead FreeContains Lead, Lead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Compliance Statements