Infineon IRF540NPBF

Name: Infineon IRF540NPBF
Brand: Infineon
SKU: IRF540NPBF

Mosfet, Power; N-ch; Vdss 100V; Rds(on) 44MILLIOHMS; Id 33A; TO-220AB; Pd 130W; -55DEG

$ 0.569

Production

Manufacturer Page Datasheet

Price and Stock

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Non-Authorized Stocking Distributors

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Distributor		SKU		Min	Pkg
Newark		IRF540NPBF	65,258	1		1.590	0.970	0.881	0.673	0.654
Future Electronics	3	IRF540NPBF	10,956	40	Tube			0.525	0.500	0.470
Arrow Electronics	3	IRF540NPBF	123,659	1		0.673	0.667	0.595	0.544	0.470
DigiKey		IRF540NPBF-ND	8,880	1	Tube	1.930	1.930	0.825	0.597	0.468
Avnet	2	63J7319	0	1		1.770	1.380	0.881	0.673	0.589	19h

Inventory History

3 month trend: -47.24%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRF540NPBF.

IHS

Datasheet10 pages22 years ago

Datasheet9 pages25 years ago

Newark

RS (Formerly Allied Electronics)

DigiKey

Jameco

Inventory History

3 month trend:

-47.24%

CAD Models

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Supply Chain

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date1995-09-01

Lifecycle StatusProduction (Last Updated: 3 weeks ago)

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Descriptions

Descriptions of Infineon IRF540NPBF provided by its distributors.

MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 44Milliohms;ID 33A;TO-220AB;PD 130W;-55deg

RS (Formerly Allied Electronics)

Single N-Channel 100 V 44 mOhm 71 nC HEXFET® Power Mosfet - TO-220-3

Future Electronics

Power MOSFET, N Channel, 100 V, 33 A, 44 Milliohms, TO-220AB, 3 Pins, Through Hole

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100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

Infineon SCT

Transistor MOSFET N-Ch. 33A/100V TO220 IRF 540 N PBF

Rapid Electronics

Trans MOSFET N-CH 100V 33A 3-Pin(3+Tab) TO-220AB

Verical

MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 130 W

Distrelec

HEXFET POWER MOSFET Power Field-Effect Transistor, 33A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

ComSIT Distribution GmbH

MOSFET, N TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 27A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.052ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: -; Power Dissipation Pd

Farnell

N CHANNEL, MOSFET, 100V, 33A, TO-220AB;; N CHANNEL, MOSFET, 100V, 33A, TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:33A; Drain Source Voltage Vds:100V; On Res; Available until stocks are exhausted

element14 APAC

N Channel, Mosfet, 100V, 33A, To-220Ab; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:33A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Msl:- Rohs Compliant: Yes |Infineon Technologies IRF540NPBF.

Newark

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

Infineon