Infineon IRF5210STRRPBF
$ 1.45
Obsolete
Price and Stock
Authorized Distributors
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SKU
Min
Pkg
Bulk Pricing
Inventory History
3 month trend: -3.09%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
CAD Models
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Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1996-08-14
Lifecycle StatusObsolete (Last Updated: 9 months ago)
LTB Date2022-10-15
LTD Date2023-04-15
Related Parts
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MOSFET, Power;P-Ch;VDSS -100V;RDS(ON) 60 Milliohms;ID -38A;D2Pak;PD 170W;-55degc
InfineonIRF540NSPBF
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 44Milliohms;ID 33A;D2Pak;PD 130W;VGS +/-20
InfineonIRF540NSTRLPBF
Transistor MOSFET N Channel 100 Volt 33 Amp 3-Pin 2+ Tab D2pak Tape And Reel
STMicroelectronicsSTB30NF10T4
N-CHANNEL 100V 0.038 OHM 35A D2PAK LOW GATE CHARGE STripFET II MOSFET
Descriptions
Descriptions of Infineon IRF5210STRRPBF provided by its distributors.
Single P-Channel 100V 60 mOhm 150 nC HEXFET® Power Mosfet - D2PAK
MOSFET, Power;P-Ch;VDSS -100V;RDS(ON) 0.06Ohm;ID -40A;D2Pak;PD 200W;VGS +/-20V
-100V Single P-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
Infineon SCT
Trans MOSFET P-CH 100V 40A 3-Pin (2+Tab) D2PAK T/R
Power Field-Effect Transistor, 38A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
3.1W(Ta)，170W(Tc) 20V 4V@ 250µA 230nC@ 10 V 1individualPChannel 100V 60mΩ@ 38A,10V 38A 2.78nF@25V D2PAK SMD mount 6.5mm*6.22mm*2.3mm
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; P-Channel MOSFET
MOSFET; Transistor Type:MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-100V; Continuous Drain Current, Id:-40A; On Resistance, Rds(on):60mohm; Rds(on) Test Voltage, Vgs:-10V; Package/Case:D2PAK ;RoHS Compliant: Yes
Manufacturer Aliases
Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Inventory History
3 month trend: -3.09%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)38 A
Drain to Source Breakdown Voltage-100 V
Drain to Source Resistance60 mΩ
Drain to Source Voltage (Vds)-100 V
Element ConfigurationSingle
Fall Time81 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.78 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation170 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Number of Elements1
On-State Resistance60 mΩ
Package Quantity800
Power Dissipation170 W
Rds On Max60 mΩ
Resistance60 MΩ
Rise Time86 ns
Schedule B8541290080
Turn-Off Delay Time72 ns
Turn-On Delay Time14 ns
Dimensions
Height4.826 mm
Length10.668 mm
Width9.65 mm
Compliance
Environmental Classification
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCAffected
RoHSCompliant
Compliance Statements