Infineon IRF2907ZSTRLPBF

Name: Infineon IRF2907ZSTRLPBF
Brand: Infineon
SKU: IRF2907ZSTRLPBF

75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS

$ 2.139

EOL

Datasheet

Manufacturer Page

Price and Stock

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Distributor

SKU

Min

Pkg

Bulk Pricing

Rochester Electronics

USD

11h

USD

Cut Tape

USD

5.750

3.814

2.714

RS (Formerly Allied Electronics)

IRF2907ZSTRLPBF

3200

Bulk

USD

2.520

Future Electronics

IRF2907ZSTRLPBF

800

Tape & Reel

USD

2.390

2.350

Inventory History

3 month trend: +0.00%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRF2907ZSTRLPBF.

Farnell

Datasheet13 pages15 years ago

IHS

Newark

RS (Formerly Allied Electronics)

Inventory History

3 month trend:

+0.00%

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Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2004-06-17

Lifecycle StatusEOL (Last Updated: 1 month ago)

LTB Date2026-09-30

LTD Date2027-03-31

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Descriptions

Descriptions of Infineon IRF2907ZSTRLPBF provided by its distributors.

75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS

Infineon SCT

MOSFET, Power;N-Ch;VDSS 75V;RDS(ON) 3.5Milliohms;ID 75A;D2Pak;PD 330W;VGS +/-20

RS (Formerly Allied Electronics)

IRF2907 Series 75V 160A 300W 4.5mOhm Single N-Channel MOSFET D2PAK

Future Electronics

Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature

Infineon

Trans MOSFET N-CH Si 75V 170A 3-Pin(2+Tab) D2PAK T/R

Verical

Power MOSFET, N Channel, 75 V, 170 A, 0.0045 ohm, TO-263AB, Surface Mount

Avnet

HEXFET Power MOSFET Power Field-Effect Transistor, 160A I(D), 75V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

ComSIT Distribution GmbH

MOSFET, N-CH, 75V, 170A, TO-263AB-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 170A; Drain Source Voltage Vds: 75V; On Resistance Rds(on): 0.0035ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 300W; Transistor Case Style: TO-263AB; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

Farnell