STMicroelectronics STD11N65M2
$ 0.824
Production
Inventory History
3 month trend: +27.84%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
CAD Models
Download STMicroelectronics STD11N65M2 symbol, footprint, and 3D STEP models from our trusted partners.
| source | eCAD | mCAD | FILES |
|---|---|---|---|
 Component Search Engine | SymbolFootprint | 3D | Download |
 SnapEDA | Footprint | 3D | Download |
The partner site will open in a new tab when downloading their CAD models
By downloading CAD models from Octopart, you agree to our Terms & Conditions and Privacy Policy.
Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2014-05-16
Lifecycle StatusProduction (Last Updated: 7 months ago)
Related Parts
InfineonIPD65R600C6BTMA1
Trans MOSFET N-CH 650V 7.3A 3-Pin(2+Tab) DPAK T/R / 650V CoolMOS C6 Power Transistor
VishaySIHD6N65E-GE3
E Series N-Channel 650 V 78 W 0.6 O 48 nC Surface Mount Power Mosfet - DPAK
Descriptions
Descriptions of STMicroelectronics STD11N65M2 provided by its distributors.
N-channel 650 V, 0.6 Ohm typ., 7 A MDmesh M2 Power MOSFET in DPAK package
STMICROELECTRONICS STD11N65M2 Power MOSFET, N Channel, 7 A, 650 V, 0.6 ohm, 10 V, 3 V
Power Field-Effect Transistor, 7A I(D), 650V, 0.68ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
MOSFET, N CHANNEL, 650V, 7A, TO-252-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 7A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.6ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 85W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015)
Manufacturer Aliases
STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Inventory History
3 month trend: +27.84%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-252-3
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight3.949996 g
Technical
Continuous Drain Current (ID)7 A
Drain to Source Resistance680 mΩ
Drain to Source Voltage (Vdss)650 V
Fall Time15 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance410 pF
Max Operating Temperature150 °C
Max Power Dissipation85 W
Min Breakdown Voltage650 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingTape and Reel
Rds On Max680 mΩ
Rise Time7.5 ns
Schedule B8541290080
Threshold Voltage3 V
Turn-Off Delay Time26 ns
Turn-On Delay Time9.5 ns