Infineon IPD65R225C7ATMA1

Name: Infineon IPD65R225C7ATMA1
Brand: Infineon
SKU: IPD65R225C7ATMA1

MOSFET Transistor, N Channel, 11 A, 650 V, 0.199 ohm, 10 V, 3.5 V

$ 1.061

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Distributor		SKU		Min	Pkg
Avnet		IPD65R225C7ATMA1	2,500	2500						0.922	6h
Newark		IPD65R225C7ATMA1	2,704	1		2.900	1.870	1.290	1.060	1.060
Arrow Electronics	3	IPD65R225C7ATMA1	4,882	1		1.069	1.069	1.069	1.069	1.069
Future Electronics	2	IPD65R225C7ATMA1	10,000	2500	Tape & Reel					1.010
Rochester Electronics		IPD65R225C7ATMA1	6,080					1.200	0.996	0.888	4h

Inventory History

3 month trend: +29.09%

CAD Models

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Datasheets & Documents

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Upverter

Datasheet15 pages0 years ago

IHS

Inventory History

3 month trend:

+29.09%

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Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2013-04-18

Lifecycle StatusProduction (Last Updated: 4 months ago)

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Descriptions

Descriptions of Infineon IPD65R225C7ATMA1 provided by its distributors.

MOSFET Transistor, N Channel, 11 A, 650 V, 0.199 ohm, 10 V, 3.5 V

Newark

Power Field-Effect Transistor, 11A I(D), 650V, 0.225ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

IHS

MOSFET, N-CH, 650V, 11A, TO-252-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 11A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.199ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.5V;

Farnell

Infineon’s CoolMOS™ C7 superjunction MOSFET series is a revolutionary step forward in technology, providing the worlds’s lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range.

Infineon