Infineon IPD650P06NMATMA1
$ 0.76
Production
Price and Stock
Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers
Distributor
SKU
Min
Pkg
Bulk Pricing
Inventory History
3 month trend: -6.59%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
Datasheets & Documents
Download datasheets and manufacturer documentation for Infineon IPD650P06NMATMA1.
CAD Models
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Alternate Parts
This Part
Alternate Parts
Price @ 1000
$ 0.76
$ 0.773
Stock
241,007
376,237
Authorized Distributors
6
6
Mount
-
-
Case/Package
TO-252
TO-252
Drain to Source Voltage (Vds)
-60 V
-60 V
Continuous Drain Current (ID)
22 A
35 A
Threshold Voltage
-
-
Rds On Max
-
-
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
83 W
125 W
Input Capacitance
-
-
Supply Chain
Country of OriginAustria, Malaysia
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2019-04-02
Lifecycle StatusProduction (Last Updated: 5 months ago)
Descriptions
Descriptions of Infineon IPD650P06NMATMA1 provided by its distributors.
MOSFET P-CH 60V 22A TO252-3 P-Channel 60 V 22A (Tc) 83W (Tc) Surface Mount PG-TO252-3-313
Infineon P-Ch MOSFET Vds=60V 22A DPAK (TO-252) SMD 3-Pin
Trans MOSFET P-CH 60V 22A 3-Pin(2+Tab) DPAK T/R
MOSFET, P-CH, -60V, -22A, 175DEG C, 83W;
Power Field-Effect Transistor, 22A I(D), 60V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
IPD650P06NM - 60V P-CHANNEL POWE
OptiMOS™ P-channel MOSFETs 60V in DPAK package represents the new technology targeted for battery management, load switch and reverse polarity protection applications. The main advantage of a P-channel device is the reduction of design complexity in medium and low power applications. Its easy interface to MCU, fast switching as well as avalanche ruggedness makes it suitable for high quality demanding applications. It is available in normal and logic level featuring a wide RDS(on) range and improves efficiency at low loads due to low Qg.
Manufacturer Aliases
Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Inventory History
3 month trend: -6.59%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
Technical Specifications
Physical
Case/PackageTO-252
Number of Terminals2
Technical
Continuous Drain Current (ID)22 A
Drain to Source Breakdown Voltage-60 V
Drain to Source Resistance65 mΩ
Drain to Source Voltage (Vds)-60 V
Gate to Source Voltage (Vgs)20 V
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation83 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation83 W
Turn-Off Delay Time33 ns
Turn-On Delay Time12 ns
Dimensions
Height2.5 mm
Datasheets & Documents
Download datasheets and manufacturer documentation for Infineon IPD650P06NMATMA1.
Compliance
Environmental Classification
China RoHSNon-Compliant
REACH SVHCAffected
RoHSCompliant
Compliance Statements