Infineon IPD380P06NMATMA1

MOSFET P-CH 60V 35A TO252-3 P-Channel 60 V 35A (Tc) 125W (Tc) Surface Mount PG-TO252-3

Power Field-Effect Transistor, 35A I(D), 60V, 0.038ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

Transistor Polarity = P-Channel / Configuration = Single / Continuous Drain Current (Id) A = -35 / Drain-Source Voltage (Vds) V = -60 / ON Resistance (Rds(on)) mOhm = 38 / Gate-Source Voltage V = 20 / Fall Time ns = 19 / Rise Time ns = 19 / Turn-OFF Delay Time ns = 47 / Turn-ON Delay Time ns = 16 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-252 / Pins = 3 / Mounting Type = SMD / Packaging = Tape & Reel / Power Dissipation (Pd) W = 125

OptiMOS™ P-channel MOSFETs 60V in DPAK package represents the new technology targeted for battery management, load switch and reverse polarity protection applications. The main advantage of a P-channel device is the reduction of design complexity in medium and low power applications. Its easy interface to MCU, fast switching as well as avalanche ruggedness makes it suitable for high quality demanding applications. It is available in normal and logic level featuring a wide RDS(on) range and improves efficiency at low loads due to low Qg.