Infineon IPB80N06S4L07ATMA2
$ 0.753
Production
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Min
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Inventory History
3 month trend: +3.33%
CAD Models
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Alternate Parts
0 parts available
Datasheets & Documents
Download datasheets and manufacturer documentation for Infineon IPB80N06S4L07ATMA2.
CAD Models
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Supply Chain
Country of OriginMalaysia
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2009-03-24
Lifecycle StatusProduction (Last Updated: 2 weeks ago)
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Descriptions
Descriptions of Infineon IPB80N06S4L07ATMA2 provided by its distributors.
60V, N-Ch, 6.4 mΩ max, Automotive MOSFET, D2PAK, OptiMOS™-T2, PG-TO263-3, RoHS
Infineon SCT
Trans MOSFET N-CH 60V 80A Automotive 3-Pin(2+Tab) D2PAK
Power Field-Effect Transistor, 80A I(D), 60V, 0.0064ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Summary of Features: N-channel - Enhancement mode; AEC Q101 qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green Product (RoHS compliant); 100% Avalanche tested | Benefits: world's lowest RDS at 60V (on); highest current capability; lowest switching and conduction power losses for highest thermal efficiency; robust packages with superior quality and reliability; Optimized total gate charge enables smaller driver output stages | Target Applications: Valves control; Solenoids control; Lighting; Single-ended motors
Manufacturer Aliases
Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Inventory History
3 month trend: +3.33%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-263-3
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight1.946308 g
Technical
Continuous Drain Current (ID)80 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance6.4 mΩ
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Fall Time8 ns
Gate to Source Voltage (Vgs)16 V
Input Capacitance5.68 nF
Max Dual Supply Voltage60 V
Max Operating Temperature175 °C
Max Power Dissipation79 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance6.4 mΩ
Package Quantity1000
PackagingTape & Reel
Power Dissipation79 W
Rds On Max6.4 mΩ
Rise Time3 ns
Turn-Off Delay Time50 ns
Turn-On Delay Time10 ns
Dimensions
Height4.4 mm
Length10 mm
Width9.25 mm
Datasheets & Documents
Download datasheets and manufacturer documentation for Infineon IPB80N06S4L07ATMA2.
Compliance
Environmental Classification
China RoHSCompliant
Lead FreeLead Free
RatingsAEC-Q101
REACH SVHCNo
RoHSCompliant
Compliance Statements