Infineon IPB77N06S212ATMA2
Obsolete
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Inventory History
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CAD Models
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Datasheets & Documents
Download datasheets and manufacturer documentation for Infineon IPB77N06S212ATMA2.
CAD Models
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Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2006-03-13
Lifecycle StatusObsolete (Last Updated: 2 months ago)
Related Parts
InfineonIPB80N06S2L11ATMA2
55V, N-Ch, 10.7 mΩ max, Automotive MOSFET, D2PAK, OptiMOS™, PG-TO263-3, RoHS
InfineonIPB80N06S209ATMA2
55V, N-Ch, 8.8 mΩ max, Automotive MOSFET, D2PAK, OptiMOS™, PG-TO263-3, RoHS
InfineonAUIRF1018ES
Automotive Q101 60V Single N-Channel HEXFET Power MOSFET in a D2-Pak Package
STMicroelectronicsSTB80N4F6AG
MOSFET N-CH 40V 80A D2PAK / N-Channel 40 V 80A (Tc) 70W (Tc) Surface Mount D²PAK (TO-263)
Descriptions
Descriptions of Infineon IPB77N06S212ATMA2 provided by its distributors.
55V, N-Ch, 11.7 mΩ max, Automotive MOSFET, D2PAK, OptiMOS™, PG-TO263-3, RoHS
Infineon SCT
Trans MOSFET N-CH 55V 77A Automotive 3-Pin(2+Tab) D2PAK T/R
Power Field-Effect Transistor, 77A I(D), 55V, 0.0117ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Summary of Features: N-channel - Enhancement mode; Automotive AEC Q101 qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green package (lead free); Ultra low Rds(on); 100% Avalanche tested | Benefits: world's lowest RDS at 55V (on) in planar technology; highest current capability; lowest switching and conduction power losses for highest thermal efficiency; robust packages with superior quality and reliability; Optimized total gate charge enables smaller driver output stages | Target Applications: Valves control; Solenoids control; Lighting; Single-ended motors
Manufacturer Aliases
Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Inventory History
No data available
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-263-3
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)77 A
Drain to Source Breakdown Voltage55 V
Drain to Source Resistance11.7 mΩ
Drain to Source Voltage (Vdss)55 V
Element ConfigurationSingle
Fall Time26 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.77 nF
Max Dual Supply Voltage55 V
Max Operating Temperature175 °C
Max Power Dissipation158 W
Min Breakdown Voltage55 V
Min Operating Temperature-55 °C
Number of Elements1
On-State Resistance11.7 mΩ
Package Quantity1000
PackagingTape & Reel
Power Dissipation158 W
Rds On Max11.7 mΩ
Rise Time27 ns
Turn-Off Delay Time34 ns
Turn-On Delay Time14 ns
Datasheets & Documents
Download datasheets and manufacturer documentation for Infineon IPB77N06S212ATMA2.
Compliance
Environmental Classification
China RoHSNon-Compliant
Halogen FreeHalogen Free
REACH SVHCNo
RoHSCompliant
Compliance Statements