Infineon IPB65R150CFDATMA1

Name: Infineon IPB65R150CFDATMA1
Brand: Infineon
SKU: IPB65R150CFDATMA1

Trans MOSFET N-CH 650V 22.4A Automotive 3-Pin(2+Tab) D2PAK T/R

$ 1.88

Obsolete

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

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Distributor		SKU		Min	Pkg
Rochester Electronics		IPB65R150CFDATMA1	398,000					2.100	1.880	1.770	6h
Farnell	2	IPB65R150CFDATMA1	0	1	Cut Tape	5.067*	4.449*	4.153*	2.742*	2.742*	4h
Microchip USA		IPB65R150CFDATMA1	256	150	Tray				16.117	16.117	3d
Verical	2	IPB65R150CFDATMA1	381,000	143					2.350	2.213
Win Source		WS-IPB65R150CFDATMA1	15,000	12				3.131	2.807	2.807	7h

Inventory History

3 month trend: +4.19%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IPB65R150CFDATMA1.

ODG (Origin Data Global)

Datasheet20 pages14 years ago

TME

Inventory History

3 month trend:

+4.19%

CAD Models

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Alternate Parts

This Part

Alternate Parts

InfineonIPB65R150CFDATMA1

InfineonIPB65R150CFDAATMA1

Price @ 1000

$ 1.88

$ 2.187

Stock

905,955

499,970

Authorized Distributors

Mount

Surface Mount

Case/Package

TO-263-3

Drain to Source Voltage (Vdss)

650 V

Continuous Drain Current (ID)

22.4 A

Threshold Voltage

Rds On Max

150 mΩ

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

195.3 W

Input Capacitance

2.34 nF

Supply Chain

Country of OriginAustria, Malaysia

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2011-11-16

Lifecycle StatusObsolete (Last Updated: 4 weeks ago)

LTB Date2023-08-31

LTD Date2024-02-29

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Descriptions

Descriptions of Infineon IPB65R150CFDATMA1 provided by its distributors.

Trans MOSFET N-CH 650V 22.4A Automotive 3-Pin(2+Tab) D2PAK T/R

Verical

Power Field-Effect Transistor, 22.4A I(D), 650V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Semicontronic

MOSFET, N-CH, 650V, 22.4A, TO-263-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 22.4A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.135ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: -; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: CoolMOS CFD2 Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

Farnell

Replacement for 650V CoolMOS™ CFD2 is 600V CoolMOS™ CFD7650V CoolMOS™ CFD2 is Infineon's second generation of market leading high voltage CoolMOS™ MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improved energy efficiency. The softer commutation behavior and therefore better EMI behavior gives this product a clear advantage in comparison with competitor parts.

Infineon