Infineon IPA60R299CPXKSA1

Name: Infineon IPA60R299CPXKSA1
Brand: Infineon
SKU: IPA60R299CPXKSA1

Trans MOSFET N-CH 600V 11A 3-Pin(3+Tab) TO-220FP

$ 1.175

NRND

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Distributor	SKU		Min	Pkg
Rochester Electronics	IPA60R299CPXKSA1	356,126					1.360	1.130	1.010	13h
Arrow Electronics	IPA60R299CPXKSA1	135	1		2.848	1.691	1.388	1.388	1.388
Future Electronics	IPA60R299CPXKSA1	0	500	Tube				1.180	1.150
Avnet	IPA60R299CPXKSA1	0	500					1.085	1.004	16h
Mouser	726-IPA60R299CP	452	1	Tube	3.470	2.260	1.590	1.220	1.150

Inventory History

3 month trend: -0.00%

CAD Models

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Alternate Parts

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Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IPA60R299CPXKSA1.

Upverter

Datasheet10 pages15 years ago

IHS

element14 APAC

Farnell

Inventory History

3 month trend:

-0.00%

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Supply Chain

Country of OriginGermany, Mainland China, Malaysia

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2005-12-22

Lifecycle StatusNRND (Last Updated: 1 month ago)

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Descriptions

Descriptions of Infineon IPA60R299CPXKSA1 provided by its distributors.

Trans MOSFET N-CH 600V 11A 3-Pin(3+Tab) TO-220FP

Verical

11 A 600 V 0.299 ohm N-CHANNEL Si POWER MOSFET TO-220AB

Component Stockers USA

Power Field-Effect Transistor, 11A I(D), 600V, 0.299ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

Jak Electronics

CoolMOS™ CP, Infineon's fifth series of CoolMOS™, is designed for hard and soft switching topologies, CCM PFC as well as PWM for ATX, notebook adapter PDP and LCD TV.

Infineon

MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:11A; Drain Source Voltage Vds:650V; On Resistance Rds(on):299mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:33W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:11A; Package / Case:TO-220; Power Dissipation Pd:33W; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:650V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V

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