Infineon F4-50R12MS4

Name: Infineon F4-50R12MS4
Brand: Infineon
SKU: F4-50R12MS4

Trans IGBT Module N-CH 1200V 70A 355000mW 14-Pin ECONOD-2 Tray

$ 38.72

Obsolete

Manufacturer Page Datasheet

Price and Stock

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Distributor	SKU		Min	Pkg
Rochester Electronics	F450R12MS4	901					43.270	38.720	36.440	11h
Microchip USA	F4-50R12MS4	222	20	Bulk			106.42	106.42	106.42	3h
Verical	F4-50R12MS4	901	25				54.088	48.400	45.550
IC Components Ltd.	F4-50R12MS4	860,400			48.440	48.440	48.440	48.440	48.440	2d
Fmall Co., Limited	F4-50R12MS4	4,380			37.297	37.297	34.891	32.885	30.078	>1wk

Inventory History

3 month trend: +0.00%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon F4-50R12MS4.

Upverter

Datasheet11 pages5 years ago

IHS

Farnell

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Inventory History

3 month trend:

+0.00%

CAD Models

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Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2007-02-21

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2014-04-30

LTD Date2014-10-31

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Descriptions

Descriptions of Infineon F4-50R12MS4 provided by its distributors.

Trans IGBT Module N-CH 1200V 70A 355000mW 14-Pin ECONOD-2 Tray

Verical

Insulated Gate Bipolar Transistor, 70A I(C), 1200V V(BR)CES, N-Channel

IHS

IGBT, 70A, 1200V, N-CHANNEL

Jak Electronics

70 A 1200 V N-CHANNEL IGBT

Component Stockers USA

F450R12 - IGBT MODULE '

Avnet

IGBT, POW, QUAD WITH NTC, 1200V, 50A; Module Configuration:Quad; Transistor Polarity:N Channel; DC Collector Current:50A; Collector Emitter Voltage Vces:3.2V; Power Dissipation Pd:355W; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-40°C to +125°C; Transistor Case Style:Module; No. of Pins:14; SVHC:No SVHC (19-Dec-2011); Power Dissipation Max:355W

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