Infineon BSZ018NE2LSIATMA1
$ 0.687
Obsolete
Price and Stock
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Inventory History
3 month trend: -0.82%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Datasheets & Documents
Download datasheets and manufacturer documentation for Infineon BSZ018NE2LSIATMA1.
CAD Models
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Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.75
Introduction Date2011-06-15
Lifecycle StatusObsolete (Last Updated: 8 months ago)
LTB Date2025-09-30
LTD Date2026-03-31
Related Parts
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2.5W(Ta) 20V 2.35V@ 100¦ÌA 53nC@ 4.5 V 1N 25V 2.7m¦¸@ 25A,10V 25A 5.305nF@13V SOIC-8
InfineonIRFHS8242TRPBF
25V Single N-Channel HEXFET Power MOSFET in a 2mm X 2mm PQFN package, PG-TSDSON-6, RoHS
InfineonBSZ036NE2LSATMA1
2.1W 20V 2V 7.7nC@ 4.5V,16nC@ 10V 1N 25V 3.6m¦¸@ 10V 40A 1.2nF@ 12V SON , 3.3mm*3.3mm*1.1mm
Descriptions
Descriptions of Infineon BSZ018NE2LSIATMA1 provided by its distributors.
Trans MOSFET N-CH 25V 22A 8-Pin TSDSON EP
2.1W 20V 2V 36nC 1N 25V 1.8m¦¸@ 10V 40A 2.5nF@ 12V SON , 3.3mm*3.3mm*1.1mm
Power Field-Effect Transistor, 22A I(D), 25V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
BSZ018NE2 - 12V-300V N-CHANNEL P
With the OptiMOS™ 25V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications. Available in halfbridge configuration (power stage 5x6).
MOSFET, N-CH, 25V, 40A, TSDSON-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 40A; Drain Source Voltage Vds: 25V; On Resistance Rds(on): 0.0015ohm; Available until stocks are exhausted Alternative available
Manufacturer Aliases
Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Inventory History
3 month trend: -0.82%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
MountSurface Mount
Number of Pins8
Number of Terminals3
Technical
Continuous Drain Current (ID)22 A
Drain to Source Resistance2.5 mΩ
Drain to Source Voltage (Vdss)25 V
Fall Time3.6 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.5 nF
Max Dual Supply Voltage25 V
Max Operating Temperature150 °C
Max Power Dissipation69 W
Min Breakdown Voltage25 V
Min Operating Temperature-55 °C
Number of Elements1
On-State Resistance1.8 mΩ
Package Quantity5000
PackagingTape & Reel
Power Dissipation69 W
Rise Time4.8 ns
Schedule B8541290080
Turn-Off Delay Time25 ns
Turn-On Delay Time5.2 ns
Datasheets & Documents
Download datasheets and manufacturer documentation for Infineon BSZ018NE2LSIATMA1.
Compliance
Environmental Classification
China RoHSCompliant
Halogen FreeHalogen Free
Lead FreeContains Lead
REACH SVHCAffected
RoHSCompliant
Compliance Statements