Small Signal Field-Effect Transistor, 0.39A I(D), 20V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, PLASTIC PACKAGE-6

SHENGYU ELECTRONICS

MOSFET 2P-CH 20V 0.39A SOT363

DigiKey

Manufacturer Aliases

Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:

Infineon Technologies
INF
INFINEO
INFINE
INFIN
INFINION
INFI
INFENION
SIM
INFIEON
INFINEON TECH
INFINEN
IFX
INFIENON
IR/INFINEON
INFINEON/IR
IFT
INFINEON/SIEMENS
LNFINEON
INFN
Infineon Tech ICs
INFINEON TECHNOLOGIE
NFINEON
INFINEON/Infineon
INFINEON TECHNOLOGIES (ASIA

Part Number Aliases

This part may be known by these alternate part numbers:

BSD 223PL6327
BSD223P L6327
BSD223P-L6327

Inventory History

Inventory history trend unavailable

Technical Specifications

Physical

Case/PackageSOT-363-6

MountSurface Mount

Number of Pins6

Number of Terminals6

Technical

Continuous Drain Current (ID)390 mA

Drain to Source Breakdown Voltage20 V

Drain to Source Resistance1.2 Ω

Drain to Source Voltage (Vdss)20 V

Element ConfigurationDual

Fall Time5 ns

Gate to Source Voltage (Vgs)12 V

Input Capacitance56 pF

Max Operating Temperature150 °C

Max Power Dissipation250 mW

Min Breakdown Voltage20 V

Min Operating Temperature-55 °C

Number of Elements2

PackagingTape & Reel (TR)

Power Dissipation250 mW

Rds On Max1.2 Ω

Rise Time5 ns

Turn-Off Delay Time5.1 ns

Turn-On Delay Time3.8 ns

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon BSD223PL6327.

_legacy Avnet

Datasheet8 pages24 years ago

Compliance

Environmental Classification

China RoHSCompliant

Radiation HardeningNo

REACH SVHCUnaffected

RoHSCompliant

Compliance Statements

Conflict Mineral StatementN/AN/A