Infineon BSC019N04LSATMA1

Name: Infineon BSC019N04LSATMA1
Brand: Infineon
SKU: BSC019N04LSATMA1

BSC019N04LS Series 40 V 27 A SMT OptiMOSTM Power-MOSFET - PG-TDSON-8

$ 0.531

Production

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

See all price breaks

Distributor		SKU		Min	Pkg
Newark		BSC019N04LSATMA1	940	1	Cut Tape	1.630	1.060	0.705	0.539	0.539
Arrow Electronics	2	BSC019N04LSATMA1	5,300	1		1.342	0.906	0.664	0.522	0.449
DigiKey	3	448-BSC019N04LSATMA1CT-ND	19,203	1	Cut Tape	1.840	1.169	0.783	0.565	0.523
Avnet		BSC019N04LSATMA1	0	5K						0.382	17h
Future Electronics		BSC019N04LSATMA1	0	5K	Tape & Reel					0.710

Inventory History

3 month trend: -16.37%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon BSC019N04LSATMA1.

IHS

Datasheet13 pages0 years ago

TME

Inventory History

3 month trend:

-16.37%

CAD Models

Download Infineon BSC019N04LSATMA1 symbol, footprint, and 3D STEP models from our trusted partners.

source	eCAD	mCAD	FILES
Component Search Engine	SymbolFootprint	3D	Download
EE Concierge	SymbolFootprint
SnapEDA	Footprint		Download

The partner site will open in a new tab when downloading their CAD models

By downloading CAD models from Octopart, you agree to our Terms & Conditions and Privacy Policy.

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2013-10-02

Lifecycle StatusProduction (Last Updated: 4 months ago)

Related Parts

InfineonIPB120N04S402ATMA1

Trans MOSFET N-CH 40V 120A Automotive 3-Pin(2+Tab) D2PAK T/R / OptiMOS-T2 Power-Transistor

Details

InfineonIPB120N04S401ATMA1

40V, N-Ch, 1.5 mΩ max, Automotive MOSFET, D2PAK, OptiMOS™-T2, PG-TO263-3, RoHS

Details

InfineonBSC022N04LSATMA1

Transistor: N-MOSFET; unipolar; 40V; 100A; 69W; PG-TDSON-8

Details

onsemiFDMS015N04B

N-Channel PowerTrench® MOSFET 40V, 100A, 1.5mΩ

Details

onsemiFDMS8820

MOSFET N-CH 30V 28A POWER56 / Trans MOSFET N-CH Si 30V 28A 8-Pin PQFN EP T/R

Details

STMicroelectronicsSTH175N4F6-6AG

Power Field-Effect Transistor, 120A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

Details

Descriptions

Descriptions of Infineon BSC019N04LSATMA1 provided by its distributors.

BSC019N04LS Series 40 V 27 A SMT OptiMOSTM Power-MOSFET - PG-TDSON-8

Future Electronics

40V 100A 2.7mΩ@4.5V,50A 2.5W 2V@250uA 1 N-Channel TDSON-8-EP(5x6) MOSFETs ROHS

ODG (Origin Data Global)

Trans MOSFET N-CH 40V 27A 8-Pin TDSON T/R

Avnet

2.5W 20V 2V 41nC@ 10V,21nC@ 4.5V 1N 40V 1.9m¦¸@ 10V 100A 2.9nF@ 20V TDSON-8 , 5.9mm*5.15mm*1.27mm

UnikeyIC

Power Field-Effect Transistor, 27A I(D), 40V, 0.0027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

IHS

Infineon MOSFET BSC019N04LSATMA1

RS APAC

OptiMOS™ 40V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops. In addition these devices can be used for a broad range of industrial applications including motor control and fast switching DC-DC converter.

Infineon

MOSFET, N-CH, 40V, 100A, TDSON-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 100A; Drain Source Voltage Vds: 40V; On Resistance Rds(on): 0.0015ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Dissipation Pd: 78W; Transistor Case Style: TDSON; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: OptiMOS Series; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018)

Farnell