MOSFET; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:11.5A; On Resistance, Rds(on):0.01ohm; Rds(on) Test Voltage, Vgs:10V; Drain-Source Breakdown Voltage:30V; Gate-Source Voltage:3V; Leaded Process Compatible:Yes RoHS Compliant: Yes

Newark

Manufacturer Aliases

onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:

ON Semiconductor
ONS
ONSEMICON
ON SEM
ON SEMICONDUCTO
ON SEMICONDUCTORS
ONSEMIC
ON Semicondu
OSC
ONSE
ON Semiconductor / Fairchild
ON SEMICOND
SCG
ON Semiconductor Cor
ON SEMICO
ONSM
onsemi / Fairchild
ON SEMICONDUCTOR CORP
MOT/ON SEMI
Fairchild/ONSemiconductor
ON Semiconductor Corporation
ON4
ON Semi - ON Semiconductor
ON SEMICONDUCT
ON-SEMI SCG
ON Semiconductor Inc.
onsemiconductor
On Semiconductor Ltd

Inventory History

Inventory history trend unavailable

Technical Specifications

Physical

Case/PackageSOIC N

MountSurface Mount

Number of Pins8

Number of Terminals8

Technical

Continuous Drain Current (ID)11.5 A

Drain to Source Breakdown Voltage30 V

Drain to Source Resistance10 mΩ

Fall Time13 ns

Gate to Source Voltage (Vgs)20 V

Max Operating Temperature150 °C

Max Power Dissipation1 W

Min Breakdown Voltage30 V

Min Operating Temperature-55 °C

Number of Elements1

Power Dissipation2.5 W

Rise Time10 ns

Turn-Off Delay Time36 ns

Datasheets & Documents

Download datasheets and manufacturer documentation for onsemi SI4884DY.

IHS

Datasheet5 pages0 years ago

Arrow Electronics

Compliance

Environmental Classification

RoHSCompliant

Compliance Statements

Rohs Statement1 page13 years ago

Rohs Statement1 page14 years ago

Reach Statement2 pages13 years ago

Reach Statement8 pages11 years ago