onsemi FQU7P06TU
2.5W(Ta), 28W(Tc) 25V 4V@250µA 8.2nC@10V P-Ch MOSFET 60V 451mΩ@2.7A, 10V 5.4A 295pF@25V TO-251 TH, 6.8mm × 2.5mm ×...
$ 0.252
Obsolete
Inventory History
3 month trend: +0.00%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
CAD Models
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Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2000-10-19
Lifecycle StatusObsolete (Last Updated: 8 months ago)
LTB Date2009-03-09
LTD Date2009-09-09
Related Parts
onsemiHUF76407D3
11A, 60V, 0.107 Ohm, N-Channel, Logic Level UltraFET Power MOSFET | MOSFET N-CH 60V 12A IPAK
Descriptions
Descriptions of onsemi FQU7P06TU provided by its distributors.
2.5W(Ta), 28W(Tc) 25V 4V@250µA 8.2nC@10V P-Ch MOSFET 60V 451mΩ@2.7A,10V 5.4A 295pF@25V TO-251 TH, 6.8mm × 2.5mm × 6.3mm
MOSFET P-CH 60V 5.4A IPAK
Power Field-Effect Transistor, 5.4A I(D), 60V, 0.451ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
P-CHANNEL POWER MOSFET
MOSFETs 60V P-Channel QFET
Manufacturer Aliases
onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON Semiconductor / Fairchild
- ON SEMICOND
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Inventory History
3 month trend: +0.00%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-251-3
MountThrough Hole
Number of Terminals3
Technical
Continuous Drain Current (ID)5.4 A
Current Rating-5.4 A
Drain to Source Breakdown Voltage-60 V
Drain to Source Resistance451 mΩ
Drain to Source Voltage (Vdss)-60 V
Element ConfigurationSingle
Fall Time25 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance295 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation28 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation2.5 W
Rds On Max451 mΩ
Rise Time50 ns
Turn-Off Delay Time7.5 ns
Turn-On Delay Time7 ns
Voltage Rating (DC)-60 V
Dimensions
Height9.85 mm
Compliance
Environmental Classification
Lead FreeLead Free
REACH SVHCNo
RoHSCompliant
Compliance Statements