onsemi FJP13009
$ 0.395
Obsolete
Inventory History
3 month trend: +0.00%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
CAD Models
Download onsemi FJP13009 symbol, footprint, and 3D STEP models from our trusted partners.
| source | eCAD | mCAD | FILES |
|---|---|---|---|
 Component Search Engine | SymbolFootprint | 3D | Download |
 SnapEDA | Footprint | 3D | Download |
 Ultra Librarian | SymbolFootprint | Download |
The partner site will open in a new tab when downloading their CAD models
By downloading CAD models from Octopart, you agree to our Terms & Conditions and Privacy Policy.
Alternate Parts
This Part
Alternate Parts
Price @ 1000
$ 0.395
$ 0.703
Stock
622,108
50,346
Authorized Distributors
1
2
Mount
Through Hole
Through Hole
Case/Package
TO-220
TO-220-3
Polarity
NPN
NPN
Collector Emitter Breakdown Voltage
400 V
-
Max Collector Current
12 A
12 A
Transition Frequency
4 MHz
4 MHz
Collector Emitter Saturation Voltage
-
-
hFE Min
6
6
Power Dissipation
100 W
100 W
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2003-05-21
Lifecycle StatusObsolete (Last Updated: 4 months ago)
Related Parts
onsemiFJP13007TU
Power Bipolar Transistor, 8A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
onsemiFJP13007H1TU
Power Bipolar Transistor, 8A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
onsemiKSC5302DTU
TRANS NPN 400V 2A TO220-3 / Bipolar (BJT) Transistor NPN 400 V 2 A 50 W Through Hole TO-220-3
Descriptions
Descriptions of onsemi FJP13009 provided by its distributors.
Tube Through Hole NPN Single Bipolar (BJT) Transistor 8 @ 5A 5V 12A 100W 4MHz
Power Bipolar Transistor, 12A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Trans GP BJT NPN 400V 12A 3-Pin(3+Tab) TO-220AB Bulk
High-Voltage Fast-Switching NPN Power Transistor
High Voltage Switch Mode Application | TRANS NPN 400V 12A TO-220
The FJP13009 is a 700 V, 12 A NPN silicon epitaxial planar transistor. The FJP13009 is available with multiple hFE bin classes for ease of design use. The FJP13009 is designed for high speed switching applications which utilizes the industry standard TO-220 package offering flexibility in design and excellent power dissipation.
Manufacturer Aliases
onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Inventory History
3 month trend: +0.00%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
Technical Specifications
Physical
Case/PackageTO-220
MountThrough Hole
Number of Terminals3
Weight1.8 g
Technical
Collector Base Voltage (VCBO)700 V
Collector Emitter Breakdown Voltage400 V
Collector Emitter Voltage (VCEO)400 V
Current Rating12 A
Element ConfigurationSingle
Emitter Base Voltage (VEBO)9 V
Frequency4 MHz
Gain Bandwidth Product4 MHz
hFE Min6
Max Collector Current12 A
Max Operating Temperature150 °C
Max Power Dissipation100 W
Min Operating Temperature-65 °C
Number of Elements1
PackagingBulk
PolarityNPN
Power Dissipation100 W
Transition Frequency4 MHz
Voltage Rating (DC)400 V