Diodes Inc. ZXMP4A16GTA
$ 0.349
Production
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Bulk Pricing
Inventory History
3 month trend: -15.04%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
CAD Models
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2002-05-03
Lifecycle StatusProduction (Last Updated: 2 months ago)
Related Parts
Diodes Inc.ZXMN4A06GTA
Transistor: N-MOSFET; unipolar; 40V; 7A; 0.05ohm; 2W; -55+150 deg.C; SMD; SOT223
Descriptions
Descriptions of Diodes Inc. ZXMP4A16GTA provided by its distributors.
ZXMP4A16G Series 40 V 0.06 Ohm P-Channel Enhancement Mode MOSFET - SOT-223
Transistor, FET P-CH, Enhance Mode, 40V, 6.4A, 2W, SOT-223
Trans MOSFET P-CH 40V 4.6A 4-Pin(3+Tab) SOT-223 T/R
DiodesZetex PChannel EnhancedMOSTube, Vds=40 V, 6.4 A, SOT-223encapsulation, surface mount, 3Pin
Small Signal Field-Effect Transistor, 4.6A I(D), 40V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
SOT223 P-CHL 40V MOSFET (UMOS)
Manufacturer Aliases
Diodes Inc. has several brands around the world that distributors may use as alternate names. Diodes Inc. may also be known as the following names:
- Diodes Incorporated
- DIODE
- DII
- DIO
- DIODE INC
- DC COMPONENTS
- DIOD
- YENYO
- Diodes Zetex
- MICRO COM
- MICRO ELECTRONIC INS
- Diodes Inc / Zetex
- DIODE INCORPORATED
- DIODES ZET
- DIODSE
- DINC
- Diodes Inc Inc
- DIOINC
- FORMOSA MS
- DIODES INC(RoHS)
- ZETEX (DIODES INC)
- DIODES INC/VISHAY
- Diodes Incorporation
- ZETEXDIODES
- DIODES INC/VISH
- Pericom
- Diodes Incorporated
Inventory History
3 month trend: -15.04%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageSOT-223
Contact PlatingTin
MountSurface Mount
Number of Pins4
Number of Terminals4
Weight7.994566 mg
Technical
Continuous Drain Current (ID)4.6 A
Current Rating-6.4 A
Drain to Source Breakdown Voltage-40 V
Drain to Source Resistance60 mΩ
Drain to Source Voltage (Vdss)-40 V
Dual Supply Voltage-40 V
Element ConfigurationSingle
Fall Time12.54 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.007 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation3.9 W
Min Breakdown Voltage40 V
Min Operating Temperature-55 °C
Nominal Vgs-1 V
Number of Channels1
Number of Elements1
PackagingCut Tape
Power Dissipation2 W
Rds On Max60 mΩ
Resistance60 mΩ
Rise Time8.84 ns
Schedule B8541290080
TerminationSMD/SMT
Threshold Voltage-1 V
Turn-Off Delay Time29.18 ns
Turn-On Delay Time2.33 ns
Voltage Rating (DC)-40 V
Dimensions
Height1.8 mm
Length6.7 mm
Width3.7 mm
Compliance
Environmental Classification
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
RatingsAEC-Q101
REACH SVHCNo
RoHSCompliant
Compliance Statements