Diodes Inc. ZXMN3AMCTA

ZXMN3AMC Series 30 V 120 mOhm 2.9A Dual N-Ch Enhancement Mode Mosfet-DFN3020-B-8

$ 0.268

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	Distributor		SKU		Min	Pkg
	Avnet		ZXMN3AMCTA	0	3K						0.163	2d
	Win Source		WS-ZXMN3AMCTA	18,000	215					0.218	0.183	4h
	Aztech		ZXMN3AMCTA	12,962			1.950	1.950	1.950	1.950	1.950	2d
	Fly-Wing Technology		ZXMN3AMCTA	2,518			1.880	1.543	1.494	1.397	1.397	3d
	Klychip		ZXMN3AMCTA	Contact	1		0.870	0.870	0.827	0.827	0.827	>1w

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Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for Diodes Inc. ZXMN3AMCTA.

IHS

Datasheet8 pages15 years ago

Supply Chain

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2010-12-02

Lifecycle StatusProduction (Last Updated: 4 months ago)

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Descriptions

Descriptions of Diodes Inc. ZXMN3AMCTA provided by its distributors.

ZXMN3AMC Series 30 V 120 mOhm 2.9A Dual N-Ch Enhancement Mode Mosfet-DFN3020-B-8

Future Electronics

Transistor MOSFET Array Dual N-CH 30V 3.7A 8-Pin DFN3020B T/R

Trans MOSFET N-CH 30V 2.9A Automotive 8-Pin DFN EP T/R

Power Field-Effect Transistor, 2.9A I(D), 30V, 0.12ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Manufacturer Aliases

Diodes Inc. has several brands around the world that distributors may use as alternate names. Diodes Inc. may also be known as the following names:

Diodes Incorporated
DIODE
DII
DIO
DIODE INC
DC COMPONENTS
DIOD
YENYO
Diodes Zetex
MICRO COM
MICRO ELECTRONIC INS
Diodes Inc / Zetex
DIODE INCORPORATED
DIODES ZET
DIODSE
DINC
Diodes Inc Inc
DIOINC
FORMOSA MS
DIODES INC(RoHS)
ZETEX (DIODES INC)
DIODES INC/VISHAY
Diodes Incorporation
ZETEXDIODES
DIODES INC/VISH
Pericom
Diodes Incorporated

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Alternate Parts

0 parts available

Technical Specifications

Physical

Case/PackageDFN

MountSurface Mount

Number of Pins8

Number of Terminals8

Technical

Continuous Drain Current (ID)2.9 A

Drain to Source Breakdown Voltage30 V

Drain to Source Resistance120 mΩ

Drain to Source Voltage (Vdss)30 V

Element ConfigurationDual

Fall Time2.9 ns

Gate to Source Voltage (Vgs)20 V

Input Capacitance190 pF

Max Operating Temperature150 °C

Max Power Dissipation2.45 W

Min Breakdown Voltage30 V

Min Operating Temperature-55 °C

Number of Channels2

Number of Elements2

Power Dissipation2.45 W

Rds On Max120 mΩ

Rise Time2.3 ns

Turn-Off Delay Time6.6 ns

Turn-On Delay Time1.7 ns

Datasheets & Documents

Download datasheets and manufacturer documentation for Diodes Inc. ZXMN3AMCTA.

IHS

Datasheet8 pages15 years ago

Compliance

Environmental Classification

China RoHSCompliant

Lead FreeLead Free

Radiation HardeningNo

REACH SVHCYes

RoHSCompliant

Compliance Statements

Rohs Statement127 pages13 years ago