Diodes Inc. ZXMN10A25KTC
$ 0.71
Production
Price and Stock
Authorized Distributors
Non-Authorized Stocking Distributors
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Distributor
SKU
Min
Pkg
Bulk Pricing
Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2006-06-30
Lifecycle StatusProduction (Last Updated: 1 week ago)
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Descriptions
Descriptions of Diodes Inc. ZXMN10A25KTC provided by its distributors.
DIODES INC. ZXMN10A25KTC MOSFET Transistor, N Channel, 6.4 A, 100 V, 125 mohm, 10 V, 4 V
N-Channel 100 V 0.125 Ohm Power MOSFET Surface Mount -TO-252-3
Trans MOSFET N-CH 100V 6.4A 3-Pin(2+Tab) DPAK T/R
MOSFET, N, 100V, D-PAK ;ROHS COMPLIANT: YES
Power Field-Effect Transistor, 4.2A I(D), 100V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET, N, 100V, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:6.4A; Drain Source Voltage Vds:100V; On Resistance Rds(on):125mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:9.85W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:D-PAK; No. of Pins:3; Current Id Max:6.4A; Package / Case:DPAK; Power Dissipation Pd:9.85W; Termination Type:SMD; Voltage Vds Typ:100V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
Manufacturer Aliases
Diodes Inc. has several brands around the world that distributors may use as alternate names. Diodes Inc. may also be known as the following names:
- Diodes Incorporated
- DIODE
- DII
- DIO
- DIODE INC
- DC COMPONENTS
- DIOD
- YENYO
- Diodes Zetex
- MICRO COM
- MICRO ELECTRONIC INS
- Diodes Inc / Zetex
- DIODE INCORPORATED
- DIODES ZET
- DIODSE
- DINC
- Diodes Inc Inc
- DIOINC
- FORMOSA MS
- DIODES INC(RoHS)
- ZETEX (DIODES INC)
- DIODES INC/VISHAY
- Diodes Incorporation
- ZETEXDIODES
- DIODES INC/VISH
- Pericom
- Diodes Incorporated
Technical Specifications
Physical
Case/PackageTO-252-3
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)4.2 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance125 mΩ
Drain to Source Voltage (Vdss)100 V
Dual Supply Voltage100 V
Element ConfigurationSingle
Fall Time9.4 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance859 pF
Max Operating Temperature150 °C
Max Power Dissipation9.85 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Channels1
Number of Elements1
PackagingCut Tape
Rds On Max125 mΩ
Resistance125 mΩ
Rise Time3.7 ns
TerminationSMD/SMT
Threshold Voltage4 V
Turn-Off Delay Time17.7 ns
Turn-On Delay Time4.9 ns
Dimensions
Height2.39 mm
Length6.73 mm
Width6.22 mm
Compliance
Environmental Classification
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Compliance Statements