Diodes Inc. ZXMHC10A07N8TC
$ 0.6
Production
Price and Stock
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Min
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Bulk Pricing
Inventory History
3 month trend: -0.01%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Datasheets & Documents
Download datasheets and manufacturer documentation for Diodes Inc. ZXMHC10A07N8TC.
CAD Models
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2009-05-20
Lifecycle StatusProduction (Last Updated: 5 months ago)
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Descriptions
Descriptions of Diodes Inc. ZXMHC10A07N8TC provided by its distributors.
ZXMHC10A07N8TC Series 100 V 1 O Dual N & P Ch Enhancement Mode MOSFET - SOIC-8
Mosfet, Dual, N/P-Ch, 100V, 0.8A Rohs Compliant: Yes |Diodes Inc. ZXMHC10A07N8TC
100V SO8 Complementary enhancement mode MOSFET H-Bridge, 0.87 W, RoHS
Diodes Inc SCT
MOSFET Dual N/P-Ch 100V 1A/0.85A SOIC8
RS APAC
Trans MOSFET N/P-CH 100V 0.8A/0.68A 8-Pin SO T/R
DiodesZetex N/PMOS, Vds=100 V, 1 A,850 mA, SOIC, , 8
场效应管, MOSFET, 双路, N/P沟道, 100V, 0.8A;
Small Signal Field-Effect Transistor, 0.8A I(D), 100V, 4-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET, DUAL, N/P-CH, 100V, 0.8A;
Manufacturer Aliases
Diodes Inc. has several brands around the world that distributors may use as alternate names. Diodes Inc. may also be known as the following names:
- Diodes Incorporated
- DIODE
- DII
- DIO
- DIODE INC
- DC COMPONENTS
- DIOD
- YENYO
- Diodes Zetex
- MICRO COM
- MICRO ELECTRONIC INS
- Diodes Inc / Zetex
- DIODE INCORPORATED
- DIODES ZET
- DIODSE
- DINC
- Diodes Inc Inc
- DIOINC
- FORMOSA MS
- DIODES INC(RoHS)
- ZETEX (DIODES INC)
- DIODES INC/VISHAY
- Diodes Incorporation
- ZETEXDIODES
- DIODES INC/VISH
- Pericom
- Diodes Incorporated
Inventory History
3 month trend: -0.01%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageSO
MountSurface Mount
Number of Pins8
Number of Terminals8
Weight73.992255 mg
Technical
Continuous Drain Current (ID)800 mA
Drain to Source Breakdown Voltage-100 V
Drain to Source Resistance700 mΩ
Drain to Source Voltage (Vdss)100 V
Fall Time3.3 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance138 pF
Max Operating Temperature150 °C
Max Power Dissipation1.36 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Number of Channels4
Number of Elements4
PackagingTape and Reel
Power Dissipation1.36 W
Rds On Max700 mΩ
Rise Time2.1 ns
Turn-Off Delay Time5.9 ns
Turn-On Delay Time1.6 ns
Dimensions
Height1.5 mm
Length5 mm
Width4 mm
Datasheets & Documents
Download datasheets and manufacturer documentation for Diodes Inc. ZXMHC10A07N8TC.
Compliance
Environmental Classification
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Compliance Statements