Diodes Inc. BCX5616TA

Bipolar (BJT) Single Transistor, NPN, 80 V, 1 A, 1 W, SOT-89, Surface Mount

Power Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin

80V 1W 100@150mA,2V 1A NPN SOT-89 Bipolar Transistors - BJT ROHS

Trans GP BJT NPN 80V 1A 2000mW 4-Pin(3+Tab) SOT-89 T/R / TRANS NPN 80V 1A SOT-89

BCP5616 Series NPN 1 A 80 V SMT Silicon Medium Power Transistor - SOT-89

General Purpose Transistors NPN Ic=1A Vceo=80V hfe=100~250 P=2W SOT89-3

DIODES INC. - BCX5616TA - TRANSISTOR, NPN, 80V, SOT-89

TRANSISTOR, NPN, 80V, SOT-89; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:80V; Transition Frequency Typ ft:150MHz; Power Dissipation Pd:1W; DC Collector Current:1A; DC Current Gain hFE:100; Operating Temperature Range:-65°C to +150°C; Transistor Case Style:SOT-89; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Collector Emitter Voltage Vces:500mV; Continuous Collector Current Ic Max:1A; Current Ic Continuous a Max:1A; Current Ic hFE:150mA; Gain Bandwidth ft Min:150MHz; Hfe Min:100; Package / Case:SOT-89; Power Dissipation Pd:1W; Power Dissipation Ptot Max:1W; Termination Type:SMD; Voltage Vcbo:100V