대체 부품
Price @ 1000
$ 11.539
$ 10.533
Stock
77,378
90,813
Authorized Distributors
5
4
Mount
-
-
Case/Package
TO-263-7
TO-247-3
Drain to Source Voltage (Vdss)
900 V
900 V
Continuous Drain Current (ID)
35 A
36 A
Threshold Voltage
2.1 V
2.1 V
Rds On Max
-
-
Gate to Source Voltage (Vgs)
19 V
19 V
Power Dissipation
113 W
125 W
Input Capacitance
-
-
공급망
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusPRODUCTION (Last Updated: 5 years ago)
관련 부품
VishaySIHB6N65E-GE3
Single N-Channel 700 V 0.6 O 48 nC Surface Mount Power Mosfet - TO-263 (D2PAK)
InfineonSPB17N80C3ATMA1
Power MOSFET, N Channel, 800 V, 17 A, 290 mOhm, TO-263 (D2PAK), 3 Pins, Surface Mount
InfineonIPB65R660CFDATMA1
Power Mosfet, N Channel, 6 A, 650 V, 0.594 Ohm, 10 V, 4 V Rohs Compliant: Yes
설명
유통업체에서 제공한 Wolfspeed C3M0065090J에 대한 설명입니다.
Silicon Carbide Power MOSFET C3M Planar MOSFET Technology N-Channel Enhancement Mode
Wolfspeed
SICFET N-CH 900V 35A D2PAK-7 / N-Channel 900 V 35A (Tc) 113W (Tc) Surface Mount TO-263-7
Trans MOSFET N-CH SiC 900V 35A Automotive 8-Pin(7+Tab) D2PAK Tube
Power Field-Effect Transistor, 35A I(D), 900V, 0.078ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET
100¦ÌA 30.4nC@ 15V 113KW 660pF@ 600V 900V 110W 1 78m¦¸@ 15V 35A 900V 3.5V 15V N-Channel Enhancement Mode TO-263-7 10.18mm*9.08mm*4.44mm
MOSFET, N-CH, 900V, 35A, TO-263-7; Transistor Polarity:N Channel; Continuous Drain Current Id:35A; Drain Source Voltage Vds:900V; On Resistance Rds(on):0.065ohm; Rds(on) Test Voltage Vgs:15V; Threshold Voltage Vgs:2.1V; MSL:- RoHS Compliant: Yes
제조업체 별칭
Wolfspeed에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Wolfspeed는 다음 이름으로도 알려져 있습니다:
- Wolfspeed Inc
- Cree/Wolfspeed
- Wolfspeed - a Cree company
- Wolfspeed / Cree
- WOLFSPEED INC (CREE)
- WOLFSOn semi
기술 사양
Physical
Case/PackageTO-263-7
Number of Pins7
Number of Terminals7
Technical
Continuous Drain Current (ID)35 A
Current Rating35 A
Drain to Source Breakdown Voltage900 V
Drain to Source Resistance78 mΩ
Drain to Source Voltage (Vdss)900 V
Gate to Source Voltage (Vgs)19 V
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation113 W
Min Breakdown Voltage900 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation113 W
Schedule B8541290080
Threshold Voltage2.1 V
Turn-Off Delay Time13 ns
Turn-On Delay Time7 ns
Dimensions
Height4.82 mm