가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Avnet | SPB17N80C3ATMA1 | 17,000 | 1K | 1d | ||||||||
| Newark | SPB17N80C3ATMA1 | 2,523 | 1 | Cut Tape | ||||||||
| Arrow Electronics | SPB17N80C3ATMA1 | 2,000 | 1 | |||||||||
| Future Electronics | SPB17N80C3ATMA1 | 14,000 | 1K | Tape & Reel | ||||||||
| Rutronik | TMOSP8687 | 2,000 | 1K | 5h |
공급망
Country of OriginMalaysia
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2001-02-14
Lifecycle StatusProduction (Last Updated: 4 months ago)
관련 부품
VishaySIHB6N65E-GE3
Single N-Channel 700 V 0.6 O 48 nC Surface Mount Power Mosfet - TO-263 (D2PAK)
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N-channel 600 V, 0.092 Ohm typ., 31.5 A MDmesh II Power MOSFET in D2PAK package
InfineonSPB20N60C3ATMA1
Power MOSFET, N Channel, 650 V, 20.7 A, 0.19 ohm, TO-263 (D2PAK), Surface Mount
InfineonSPB21N50C3ATMA1
Trans MOSFET N-CH 500V 21A 3-Pin(2+Tab) D2PAK T/R / MOSFET N-CH 560V 21A TO-263
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MOSFET N-CH 900V 15A TO-263 / Trans MOSFET N-CH 900V 15A 3-Pin(2+Tab) D2PAK T/R
STMicroelectronicsSTB27NM60ND
N-channel 600 V, 0.13 Ohm, 21 A FDmesh(TM) II Power MOSFET (with fast diode) in D2PAK
설명
유통업체에서 제공한 Infineon SPB17N80C3ATMA1에 대한 설명입니다.
Power MOSFET, N Channel, 800 V, 17 A, 290 mOhm, TO-263 (D2PAK), 3 Pins, Surface Mount
Single N-Channel 800 V 290 mOhm 88 nC CoolMOS® Power Mosfet - D2PAK
227W 20V 3.9V 88nC@ 10V 1N 800V 290m¦¸@ 10V 17A 2.3nF@ 100V D2PAK , 10mm*9.25mm*4.4mm
Power Field-Effect Transistor, 17A I(D), 800V, 0.29ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
MOSFET, N, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:17A; Drain Source Voltage Vds:800V; On Resistance Rds(on):290mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:227W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-263; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:17A; Package / Case:TO-263; Power Dissipation Pd:227W; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:800V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
800V CoolMOS C3 is Infineon's third series of CoolMOS with market entry in 2001. C3 is the "working horse" of the portfolio. | Summary of Features: Low specific on-state resistance; (R on*A); Very low energy storage in output capacitance (E oss) @400V; Low gate charge (Q g); Fieldproven CoolMOS quality; CoolMOS technology has been manufactured by Infineon since 1998 | Benefits: High efficiency and power density; Outstanding cost/performance; High reliability; Ease-of-use | Target Applications: Consumer; PC power; Adapter; Lighting; Solar
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageTO-263
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)17 A
Current Rating17 A
Drain to Source Resistance290 mΩ
Drain to Source Voltage (Vdss)800 V
Gate to Source Voltage (Vgs)20 V
Max Dual Supply Voltage800 V
Max Operating Temperature150 °C
Max Power Dissipation208 W
Min Breakdown Voltage800 V
Min Operating Temperature-55 °C
Number of Elements1
On-State Resistance290 mΩ
Package Quantity1000
PackagingTape & Reel
Power Dissipation227 W
Schedule B8541290080
Turn-Off Delay Time72 ns
Turn-On Delay Time25 ns
Voltage Rating (DC)800 V
규정 준수
환경 분류
China RoHSNon-Compliant
Halogen FreeHalogen Free
Lead FreeContains Lead
REACH SVHCNo
RoHSCompliant
규정 준수 정책