공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2000-10-17
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
관련 부품
STMicroelectronicsSTB11N52K3
N-channel 525 V, 0.41 Ohm, 10 A SuperMESH3(TM) Power MOSFET in D2PAK package
InfineonIPB65R660CFDATMA1
Power Mosfet, N Channel, 6 A, 650 V, 0.594 Ohm, 10 V, 4 V Rohs Compliant: Yes
VishaySIHB6N65E-GE3
Single N-Channel 700 V 0.6 O 48 nC Surface Mount Power Mosfet - TO-263 (D2PAK)
STMicroelectronicsSTB14NM50N
N-channel 500 V, 0.28 Ohm typ., 12 A MDmesh II Power MOSFET in a D2PAK package
설명
유통업체에서 제공한 onsemi FQB5N90TM에 대한 설명입니다.
N-Channel Power MOSFET, QFET®, 900 V, 5.4 A, 2.3 Ω, D2PAK
900 V N-CHANNEL MOSFET Power Field-Effect Transistor, 5.4A I(D), 900V, 2.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
MOSFET, N CH, 900V, 5.4A, TO-263-3; Transistor Polarity:N Channel; Continuous Drain Current Id:5.4A; Drain Source Voltage Vds:900V; On Resistance Rds(on):1.8ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:158W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-263AB; No. of Pins:3; MSL:-; SVHC:No SVHC (20-Jun-2013)
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageTO-263
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight1.31247 g
Technical
Continuous Drain Current (ID)5.4 A
Current Rating5.4 A
Drain to Source Breakdown Voltage900 V
Drain to Source Resistance2.3 Ω
Drain to Source Voltage (Vdss)900 V
Element ConfigurationSingle
Fall Time50 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance1.55 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation158 W
Min Breakdown Voltage900 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation3.13 W
Rds On Max2.3 Ω
Resistance2.3 Ω
Rise Time65 ns
Schedule B8541290080
Threshold Voltage3 V
Turn-Off Delay Time65 ns
Turn-On Delay Time28 ns
Voltage Rating (DC)900 V
Dimensions
Height5.08 mm
Length10.67 mm
Width9.65 mm