대체 부품
Price @ 1000
$ 2.846
$ 3.06
Stock
989,566
2,320,328
Authorized Distributors
6
1
Mount
Surface Mount
Surface Mount
Case/Package
TO-263
TO-263
Drain to Source Voltage (Vdss)
650 V
650 V
Continuous Drain Current (ID)
31.2 A
31.2 A
Threshold Voltage
-
4 V
Rds On Max
110 mΩ
-
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
277.8 W
-
Input Capacitance
3.24 nF
-
공급망
Country of OriginAustria, Germany, Malaysia, Mexico
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2012-05-23
Lifecycle StatusProduction (Last Updated: 2 months ago)
관련 부품
STMicroelectronicsSTB34NM60N
N-channel 600 V, 0.092 Ohm typ., 31.5 A MDmesh II Power MOSFET in D2PAK package
InfineonIPB65R660CFDATMA1
Power Mosfet, N Channel, 6 A, 650 V, 0.594 Ohm, 10 V, 4 V Rohs Compliant: Yes
VishaySIHB6N65E-GE3
Single N-Channel 700 V 0.6 O 48 nC Surface Mount Power Mosfet - TO-263 (D2PAK)
InfineonIPB50R140CPATMA1
Trans MOSFET N-CH 550V 23A 3-Pin(2+Tab) D2PAK T/R / MOSFET N-CH 550V 23A TO-263
설명
유통업체에서 제공한 Infineon IPB65R110CFDAATMA1에 대한 설명입니다.
Trans MOSFET N-CH 650V 31.2A Automotive 3-Pin(2+Tab) D2PAK T/R
N-Channel 650 V 31.2 A 277.8 W 110 mOhm Surface Mount Mosfet - PG-TO-263-3
Power Field-Effect Transistor, 31.2A I(D), 650V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
650V CoolMOS™ CFDA Superjunction (SJ) MOSFET is Infineon's second generation of market leading automotive qualified high voltage CoolMOS™ power MOSFETs. In addition to the well-known attributes of high quality and reliability required by the automotive industry, the 650V CoolMOS™ CFDA series provides also an integrated fast body diode.
Mosfet, N-Ch, 650V, 31.2A, 0.2778W; Channel Type:N Channel; Drain Source Voltage Vds:650V; Continuous Drain Current Id:31.2A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Infineon Technologies IPB65R110CFDAATMA1
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageTO-263
MountSurface Mount
Number of Terminals2
Technical
Continuous Drain Current (ID)31.2 A
Drain to Source Resistance110 mΩ
Drain to Source Voltage (Vdss)650 V
Fall Time6 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance3.24 nF
Max Dual Supply Voltage650 V
Max Operating Temperature150 °C
Max Power Dissipation277.8 W
Min Breakdown Voltage650 V
Min Operating Temperature-40 °C
Number of Elements1
On-State Resistance110 mΩ
Package Quantity1000
PackagingTape & Reel
Power Dissipation277.8 W
Rds On Max110 mΩ
Rise Time11 ns
Schedule B8541290080
Turn-Off Delay Time68 ns
Turn-On Delay Time16 ns
규정 준수
환경 분류
China RoHSNon-Compliant
Halogen FreeHalogen Free
Lead FreeContains Lead
Radiation HardeningNo
RatingsAEC-Q101
REACH SVHCNo
RoHSCompliant
규정 준수 정책