대체 부품
Price @ 1000
$ 0.587
$ 0.7
$ 0.7
Stock
47,153
184,257
184,257
Authorized Distributors
6
6
6
Mount
Surface Mount
Surface Mount
Surface Mount
Case/Package
TO-263-3
D2PAK
D2PAK
Drain to Source Voltage (Vds)
100 V
100 V
100 V
Continuous Drain Current (ID)
5.6 A
5.6 A
5.6 A
Threshold Voltage
-
4 V
4 V
Rds On Max
540 mΩ
540 mΩ
540 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
20 V
Power Dissipation
3.7 W
3.7 W
3.7 W
Input Capacitance
180 pF
180 pF
180 pF
공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1993-09-01
Lifecycle StatusProduction (Last Updated: 9 months ago)
관련 부품
InfineonIRF9540NSPBF
MOSFET P-CH 100V 23A D2PAK "P-Channel 100 V 23A (Tc) 3.1W (Ta), 110W (Tc) Surface Mount D2PAK"
설명
유통업체에서 제공한 Vishay IRF510STRRPBF에 대한 설명입니다.
Trans MOSFET N-CH 100V 5.6A 3-Pin(2+Tab) D2PAK T/R
MOSFET N-Chan 100V 5.6 Amp
MOSFET N-CHANNEL 100V
Power Field-Effect Transistor, 5.6A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
3.7W(Ta)，43W(Tc) 20V 4V@ 250µA 8.3nC@ 10 V 1individualNChannel 100V 540mΩ@ 3.4A,10V 5.6A 180pF@25V D2PAK，TO-263 SMD mount 10.67mm*9.65mm*4.83mm
N-CH SINGLE 100V TO263
NCHAN IRF510STRRPBF
제조업체 별칭
Vishay에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Vishay는 다음 이름으로도 알려져 있습니다:
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY OPTO
- VISHAY FOIL RESISTORS
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- Vishay Techno
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
기술 사양
Physical
Case/PackageTO-263-3
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight1.437803 g
Technical
Continuous Drain Current (ID)5.6 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance540 mΩ
Drain to Source Voltage (Vds)100 V
Element ConfigurationSingle
Fall Time9.4 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance180 pF
Max Operating Temperature175 °C
Max Power Dissipation43 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation3.7 W
Rds On Max540 mΩ
Rise Time16 ns
Schedule B8541290080
Turn-Off Delay Time15 ns
Turn-On Delay Time6.9 ns
Dimensions
Height4.83 mm
Length10.67 mm
Width9.65 mm