공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1993-09-01
Lifecycle StatusProduction (Last Updated: 9 months ago)
LTB Date2008-06-30
LTD Date2008-09-30
관련 부품
InfineonIRF9540NSPBF
MOSFET P-CH 100V 23A D2PAK "P-Channel 100 V 23A (Tc) 3.1W (Ta), 110W (Tc) Surface Mount D2PAK"
InfineonSPB10N10L G
N-CHANNEL POWER MOSFET N-Channel 100 V 10.3A (Tc) 50W (Tc) Surface Mount PG-TO263-3-2
설명
유통업체에서 제공한 Vishay IRF530STRLPBF에 대한 설명입니다.
Trans MOSFET N-CH 100V 14A 3-Pin(2+Tab) D2PAK T/R
N-Ch MOSFET, 100V, 14A, 160mΩ@8.4A,10V, 20V Vgs, 4V@250µA, 26nC@10V, 670pF@25V, 3.7W(Ta), 88W(Tc), D2PAK, SMD
Power Field-Effect Transistor, 14A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:14A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:2V; Power Dissipation:88W; No. Of Pins:3Pins Rohs Compliant: No |Vishay IRF530STRLPBF.
제조업체 별칭
Vishay에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Vishay는 다음 이름으로도 알려져 있습니다:
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY OPTO
- VISHAY FOIL RESISTORS
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- Vishay Techno
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
기술 사양
Physical
Case/PackageTO-263-3
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight1.946308 g
Technical
Continuous Drain Current (ID)14 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance160 mΩ
Drain to Source Voltage (Vds)100 V
Element ConfigurationSingle
Fall Time24 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance670 pF
Max Operating Temperature175 °C
Max Power Dissipation88 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Nominal Vgs2 V
Number of Channels1
Number of Elements1
Power Dissipation3.7 W
Rds On Max160 mΩ
Rise Time34 ns
Schedule B8541290080
Turn-Off Delay Time23 ns
Turn-On Delay Time10 ns
Dimensions
Height4.83 mm
Length10.67 mm
Width9.65 mm