대체 부품
Price @ 1000
$ 0.579
$ 0.55
$ 0.55
Stock
236,028
227,531
227,531
Authorized Distributors
6
6
6
Mount
Surface Mount
Surface Mount
Surface Mount
Case/Package
D2PAK
TO-263-3
TO-263-3
Drain to Source Voltage (Vdss)
100 V
100 V
100 V
Continuous Drain Current (ID)
5.6 A
5.6 A
5.6 A
Threshold Voltage
4 V
-
-
Rds On Max
540 mΩ
540 mΩ
540 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
20 V
Power Dissipation
3.7 W
3.7 W
3.7 W
Input Capacitance
180 pF
180 pF
180 pF
공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1993-09-01
Lifecycle StatusProduction (Last Updated: 4 months ago)
관련 부품
InfineonIRF540NSTRLPBF
Transistor MOSFET N Channel 100 Volt 33 Amp 3-Pin 2+ Tab D2pak Tape And Reel
InfineonIRF530NSTRLPBF
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 90Milliohms;ID 17A;D2Pak;PD 70W;VGS +/-20V
설명
유통업체에서 제공한 Vishay IRF510SPBF에 대한 설명입니다.
Single N-Channel 100 V 0.54 Ohms Surface Mount Power Mosfet - D2PAK-3
Trans MOSFET N-CH 100V 5.6A 3-Pin(2+Tab) D2PAK
MOSFET N-CH 100V 5.6A D2PAK | Siliconix / Vishay IRF510SPBF
Power MOSFET Power Field-Effect Transistor, 5.6A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:5.6A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Power Dissipation:43W; No. Of Pins:3Pins Rohs Compliant: No |Vishay IRF510SPBF.
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 5.6 / Drain-Source Voltage (Vds) V = 100 / ON Resistance (Rds(on)) mOhm = 540 / Gate-Source Voltage V = 20 / Fall Time ns = 9.4 / Rise Time ns = 16 / Turn-OFF Delay Time ns = 15 / Turn-ON Delay Time ns = 6.9 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = DDPAK / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 43
제조업체 별칭
Vishay에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Vishay는 다음 이름으로도 알려져 있습니다:
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- VISH
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- Vishay Intertechnologies
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- VSHAY
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기술 사양
Physical
Case/PackageD2PAK
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight1.437803 g
Technical
Continuous Drain Current (ID)5.6 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance540 mΩ
Drain to Source Voltage (Vdss)100 V
Element ConfigurationSingle
Fall Time9.4 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance180 pF
Max Operating Temperature175 °C
Max Power Dissipation43 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Channels1
Number of Elements1
PackagingBulk
Power Dissipation3.7 W
Rds On Max540 mΩ
Resistance540 mΩ
Rise Time16 ns
Schedule B8541290080
Threshold Voltage4 V
Turn-Off Delay Time15 ns
Turn-On Delay Time6.9 ns
Dimensions
Height4.83 mm
Length10.67 mm
Width9.65 mm