공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2000-10-19
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2008-06-06
LTD Date2008-12-06
관련 부품
VishayIRF530STRLPBF
3.7W(Ta),88W(Tc) 20V 4V@ 250¦ÌA 26nC@ 10 V 1N 100V 160m¦¸@ 8.4A,10V 14A 670pF@25V D2PAK
VishayIRF530STRRPBF
3.7W(Ta),88W(Tc) 20V 4V@ 250¦ÌA 26nC@ 10 V 1N 100V 160m¦¸@ 8.4A,10V 14A 670pF@25V D2PAK,TO-263
설명
유통업체에서 제공한 onsemi FQB19N10LTM에 대한 설명입니다.
MOSFET N-CH 100V 19A D2PAK
Power Field-Effect Transistor, 19A I(D), 100V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
N-CHANNEL POWER MOSFET
MOSFETs 100V N-Ch Log Level
MISCELLANEOUS MOSFETS;
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageTO-263-3
MountSurface Mount
Number of Terminals2
Technical
Continuous Drain Current (ID)19 A
Current Rating19 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance110 mΩ
Drain to Source Voltage (Vdss)100 V
Element ConfigurationSingle
Fall Time140 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance870 pF
Max Operating Temperature175 °C
Max Power Dissipation75 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation3.75 W
Rds On Max100 mΩ
Rise Time410 ns
Turn-Off Delay Time20 ns
Voltage Rating (DC)100 V