대체 부품
이 부품
대체 부품
Price @ 1000
$ 1.245
Stock
75,016
235,629
Authorized Distributors
1
3
Mount
Surface Mount
-
Case/Package
D2PAK
D2PAK
Drain to Source Voltage (Vdss)
62 V
60 V
Continuous Drain Current (ID)
30 A
30 A
Threshold Voltage
-
-
Rds On Max
80 mΩ
80 mΩ
Gate to Source Voltage (Vgs)
15 V
15 V
Power Dissipation
125 W
-
Input Capacitance
2.19 nF
2.19 nF
공급망
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1996-01-01
Lifecycle StatusObsolete (Last Updated: 2 weeks ago)
관련 부품
InfineonIRF5305STRLPBF
MOSFET, Power;P-Ch;VDSS -55V;RDS(ON) 0.06Ohm;ID -31A;D2Pak;PD 110W;VGS +/-20V
InfineonIRF5305SPBF
MOSFET, Power;P-Ch;VDSS -55V;RDS(ON) 0.06Ohm;ID -31A;D2Pak;PD 110W;VGS +/-20V
STMicroelectronicsSTB45NF06T4
N-channel 60 V, 0.22 Ohm typ., 38 A STripFET(TM) II Power MOSFET in a D2PAK package
설명
유통업체에서 제공한 onsemi MTB30P06VT4에 대한 설명입니다.
Tape & Reel (TR) Surface Mount P-Channel Single Mosfet Transistor 30A Tc 30A 3W 52.4ns
MOSFETs- Power and Small Signal 60V 30A P-Channel No-Cancel/No-Return
TRANS MOSFET P-CH 60V 30A 3PIN D2PAK
30 A 60 V 0.08 ohm P-CHANNEL Si POWER MOSFET
30 AMPS, 60 VOLTS P-CHANNEL D2PAK POWER MOSFET Power Field-Effect Transistor, 30A I(D), 60V, 0.08ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)30 A
Current Rating-30 A
Drain to Source Breakdown Voltage62 V
Drain to Source Resistance80 mΩ
Drain to Source Voltage (Vdss)62 V
Element ConfigurationSingle
Fall Time52.4 ns
Gate to Source Voltage (Vgs)15 V
Input Capacitance2.19 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation125 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation125 W
Rds On Max80 mΩ
Rise Time25.9 ns
Turn-Off Delay Time98 ns
Turn-On Delay Time14.7 ns
Voltage Rating (DC)-60 V
Dimensions
Height4.83 mm