공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2005-04-22
Lifecycle StatusProduction (Last Updated: 8 months ago)
관련 부품
InfineonIRF5305SPBF
MOSFET, Power;P-Ch;VDSS -55V;RDS(ON) 0.06Ohm;ID -31A;D2Pak;PD 110W;VGS +/-20V
STMicroelectronicsSTB45NF06T4
N-channel 60 V, 0.22 Ohm typ., 38 A STripFET(TM) II Power MOSFET in a D2PAK package
InfineonIRLZ34NSTRLPBF
Power MOSFET, N Channel, 55 V, 30 A, 0.035 ohm, TO-263 (D2PAK), Surface Mount
설명
유통업체에서 제공한 Infineon IRF5305STRLPBF에 대한 설명입니다.
MOSFET, Power;P-Ch;VDSS -55V;RDS(ON) 0.06Ohm;ID -31A;D2Pak;PD 110W;VGS +/-20V
Single P-Channel 55V 0.06 Ohm 63 nC HEXFET® Power Mosfet - D2PAK
Power MOSFET, P Channel, 55 V, 31 A, 0.06 ohm, TO-263 (D2PAK), Surface Mount
MOSFET P-CH 55V 31A D2PAK / Trans MOSFET P-CH 55V 31A 3-Pin(2+Tab) D2PAK T/R
-55V Single P-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
Infineon SCT
Single P-Channel 55 V 60 mOhm 42 nC HEXFET® Power Mosfet - D2PAK
P Channel Mosfet, -55V, 31A, D2-Pak; Tra |Infineon Technologies IRF5305STRLPBF.
P CHANNEL MOSFET, -55V, 31A, D2-PAK; TRA; Transistor Polarity:P Channel; Continuous Drain Current Id:-31A;
Power Field-Effect Transistor, 31A I(D), 55V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageD2PAK
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)31 A
Current Rating-31 A
Drain to Source Breakdown Voltage-55 V
Drain to Source Resistance60 mΩ
Drain to Source Voltage (Vdss)-55 V
Element ConfigurationSingle
Fall Time63 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.2 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature150 °C
Max Power Dissipation110 W
Min Breakdown Voltage55 V
Min Operating Temperature-55 °C
Nominal Vgs-4 V
Number of Channels1
Number of Elements1
On-State Resistance60 mΩ
Package Quantity800
Power Dissipation3.8 W
Rds On Max60 mΩ
Resistance60 mΩ
Rise Time66 ns
Schedule B8541290080
Threshold Voltage-4 V
Turn-Off Delay Time39 ns
Turn-On Delay Time14 ns
Voltage Rating (DC)-55 V
Dimensions
Height5.084 mm
Length10.668 mm
Width9.65 mm
규정 준수
환경 분류
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
규정 준수 정책