공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1980-01-04
Lifecycle StatusObsolete (Last Updated: 1 month ago)
LTB Date2024-07-27
LTD Date2025-01-27
관련 부품
InfineonIRFZ44ESTRLPBF
MOSFET, Power;N-Ch;VDSS 60V;RDS(ON) 0.023Ohm;ID 48A;D2Pak;PD 110W;VGS +/-20V;-55
STMicroelectronicsSTB36NF06LT4
N-channel 60V - 0.032Ohm - 30A - D2PAK STripFET(TM) II Power MOSFET
설명
유통업체에서 제공한 STMicroelectronics STB45NF06T4에 대한 설명입니다.
N-channel 60 V, 0.22 Ohm typ., 38 A STripFET(TM) II Power MOSFET in a D2PAK package
STB45NF06T4 N-CHANNEL MOSFET TRANSISTOR, 38 A, 60 V, 3-PIN D2PAK
Trans MOSFET N-CH 60V 38A Automotive 3-Pin(2+Tab) D2PAK T/R
MOSFET, N CH, 60V, 38A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:19A; Drain Source Voltage Vds:60V; On Resistance Rds(on):235mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:80W; Operating Temperature Range:-65°C to +175°C; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:38A; Package / Case:D2-PAK; Power Dissipation Pd:80W; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:60V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
제조업체 별칭
STMicroelectronics에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. STMicroelectronics는 다음 이름으로도 알려져 있습니다:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
기술 사양
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)38 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance28 mΩ
Drain to Source Voltage (Vdss)60 V
Dual Supply Voltage60 V
Element ConfigurationSingle
Fall Time10 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance980 pF
Max Operating Temperature175 °C
Max Power Dissipation80 W
Min Breakdown Voltage60 V
Min Operating Temperature-65 °C
Nominal Vgs3 V
Number of Elements1
PackagingTape and Reel
Power Dissipation80 W
Rds On Max28 mΩ
Resistance23 mΩ
Rise Time40 ns
TerminationSMD/SMT
Threshold Voltage3 V
Turn-Off Delay Time28 ns
Turn-On Delay Time12 ns
Dimensions
Height4.6 mm
Length10.4 mm
Width9.35 mm