공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2005-04-22
Lifecycle StatusObsolete (Last Updated: 9 months ago)
LTB Date2022-10-15
LTD Date2023-04-15
관련 부품
InfineonIRF5305SPBF
MOSFET, Power;P-Ch;VDSS -55V;RDS(ON) 0.06Ohm;ID -31A;D2Pak;PD 110W;VGS +/-20V
STMicroelectronicsSTB45NF06T4
N-channel 60 V, 0.22 Ohm typ., 38 A STripFET(TM) II Power MOSFET in a D2PAK package
InfineonIRLZ34NSTRLPBF
MOSFET N-CH 55V 30A D2PAK "N-Channel 55 V 30A (Tc) 3.8W (Ta), 68W (Tc) Surface Mount D2PAK"
InfineonIRFZ34NSTRLPBF
MOSFET N-CH 55V 29A D2PAK "N-Channel 55 V 29A (Tc) 3.8W (Ta), 68W (Tc) Surface Mount D2PAK"
설명
유통업체에서 제공한 Infineon IRF5305STRRPBF에 대한 설명입니다.
MOSFET P-CH 55V 31A D2PAK "P-Channel 55 V 31A (Tc) 3.8W (Ta), 110W (Tc) Surface Mount D2PAK"
Single P-Channel 55 V 60 mOhm 42 nC HEXFET® Power Mosfet - D2PAK
-55V Single P-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
Infineon SCT
Trans MOSFET P-CH 55V 31A 3-Pin(2+Tab) D2PAK T/R
3.8W(Ta)，110W(Tc) 20V 4V@ 250µA 63nC@ 10 V 1individualPChannel 55V 60mΩ@ 16A,10V 31A 1.2nF@25V D2PAK SMD mount 6.5mm*6.22mm*2.3mm
MOSFET; Transistor Type:MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-55V; Continuous Drain Current, Id:-31A; On Resistance, Rds(on):60mohm; Rds(on) Test Voltage, Vgs:-10V; Package/Case:D2PAK ;RoHS Compliant: Yes
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)31 A
Drain to Source Breakdown Voltage-55 V
Drain to Source Resistance60 mΩ
Drain to Source Voltage (Vds)-55 V
Element ConfigurationSingle
Fall Time63 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.2 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature150 °C
Max Power Dissipation110 W
Min Breakdown Voltage55 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance60 mΩ
Package Quantity800
Power Dissipation3.8 W
Rds On Max60 mΩ
Rise Time66 ns
Schedule B8541290080
Turn-Off Delay Time39 ns
Turn-On Delay Time14 ns
Dimensions
Height5.084 mm
Length10.668 mm
Width9.65 mm
규정 준수
환경 분류
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCAffected
RoHSCompliant
규정 준수 정책