대체 부품
Price @ 1000
$ 0.099
Stock
97,462
238,834
Authorized Distributors
0
3
Mount
Surface Mount
Surface Mount
Case/Package
SOT-23-3
TO-236-3
Drain to Source Voltage (Vdss)
-20 V
-20 V
Continuous Drain Current (ID)
780 mA
780 mA
Threshold Voltage
-1.5 V
-
Rds On Max
-
600 mΩ
Gate to Source Voltage (Vgs)
12 V
12 V
Power Dissipation
540 mW
540 mW
Input Capacitance
97 pF
97 pF
공급망
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.21.00.95
Introduction Date2004-01-22
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2024-07-31
LTD Date2025-01-31
관련 부품
InfineonBSS214NH6327XTSA1
Mosfet, N-Ch, 20V, 1.5A, Sot-23 Rohs Compliant: Yes |Infineon Technologies BSS214NH6327XTSA1
InfineonBSS205NH6327XTSA1
Mosfet, N-Ch, 20V, 2.5A, Sot-23 Rohs Compliant: Yes |Infineon Technologies BSS205NH6327XTSA1
설명
유통업체에서 제공한 Infineon IRLML6302PBF에 대한 설명입니다.
Power MOSFET, P Channel, 20 V, 780 mA, 600 Milliohms, SOT-23, 3 Pins, Surface Mount
MOSFET Operating temperature: -55...150 °C Housing type: SOT-23 Polarity: P Power dissipation: 540 mW
Small Signal Field-Effect Transistor, 0.78A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, LEAD FREE, MICRO-3
MOSFET, P, LOGIC, SOT-23; Transistor Polarity:P Channel; Continuous Drain Current Id:600mA; Drain Source Voltage Vds:20V; On Resistance Rds(on):600mohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-1.5V; Power Dissipation Pd:400mW; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:-780mA; Current Temperature:25°C; Device Marking:IRLML6302; External Depth:2.5mm; External Length / Height:1.12mm; External Width:3.05mm; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:SOT-23; Power Dissipation Pd:400mW; Power Dissipation Pd:400mW; Pulse Current Idm:34A; SMD Marking:1C; Tape Width:8mm; Termination Type:SMD; Voltage Vds Typ:-20V; Voltage Vgs Max:-12V; Voltage Vgs Rds on Measurement:-4.5V; Voltage Vgs th Max:-1.4V
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- Infineon Technologies
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기술 사양
Physical
Case/PackageSOT-23-3
MountSurface Mount
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)780 mA
Drain to Source Breakdown Voltage-20 V
Drain to Source Resistance600 mΩ
Drain to Source Voltage (Vdss)-20 V
Dual Supply Voltage-20 V
Element ConfigurationSingle
Gate to Source Voltage (Vgs)12 V
Input Capacitance97 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation540 mW
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Nominal Vgs-1.5 V
Number of Channels1
Number of Elements1
PackagingCut Tape
Power Dissipation540 mW
Recovery Time53 ns
Threshold Voltage-1.5 V
Turn-Off Delay Time22 ns
Turn-On Delay Time13 ns
Dimensions
Height1.12 mm
Length3.05 mm