공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2010-03-26
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
관련 부품
InfineonBSS138NH6327XTSA2
Power MOSFET, N Channel, 60 V, 230 mA, 3.5 Ohm, SOT-23, 3 Pins, Surface Mount
설명
유통업체에서 제공한 onsemi BSS138K에 대한 설명입니다.
TRANSISTOR, MOSFET, N-CHANNEL, 50V, 0.22A, LOGIC LEVEL, FAST SWITCHING, SOT23
N-Channel MOSFET, Logic Level Enhancement Mode, 50V 0.22A, 1.6Ω
Power MOSFET, N Channel, 50 V, 220 mA, 1.6 ohm, SOT-23, Surface Mount
Small Signal Field-Effect Transistor, 0.22A I(D), 50V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
MOSFET, N-CH, 50V, 0.22A, SOT-23-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 220mA; Drain Source Voltage Vds: 50V; On Resistance Rds(on): 1.6ohm; Rds(on) Test Voltage Vgs: 5V; Threshold Voltage Vgs: 600mV;
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) mA = 220 / Drain-Source Voltage (Vds) V = 50 / ON Resistance (Rds(on)) Ohm = 2.5 / Gate-Source Voltage V = 12 / Fall Time ns = 35 / Rise Time ns = 5 / Turn-OFF Delay Time ns = 60 / Turn-ON Delay Time ns = 5 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) mW = 350
제조업체 별칭
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- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageSOT-23-3
Contact PlatingTin
MountSurface Mount
Number of Pins2
Number of Terminals3
Weight30 mg
Technical
Continuous Drain Current (ID)220 mA
Drain to Source Breakdown Voltage50 V
Drain to Source Resistance2.5 Ω
Drain to Source Voltage (Vdss)50 V
Element ConfigurationSingle
Fall Time35 ns
Gate to Source Voltage (Vgs)12 V
Input Capacitance58 pF
Max Operating Temperature150 °C
Max Power Dissipation350 mW
Min Breakdown Voltage50 V
Min Operating Temperature-55 °C
Nominal Vgs600 mV
Number of Elements1
Power Dissipation350 mW
Rds On Max1.6 Ω
Resistance1.6 Ω
Rise Time5 ns
Schedule B8541210080
Threshold Voltage600 mV
Turn-Off Delay Time60 ns
Turn-On Delay Time5 ns
Dimensions
Height930 µm
Length2.92 mm
Width1.3 mm