onsemi FDV303N

Name: onsemi FDV303N
Brand: onsemi
SKU: FDV303N

Transistor, Digital Fet, N-channel, Mosfet, 25V, 0.68A, 0.35W, SOT-23

$ 0.074

Production

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모든 가격 할인 보기

Distributor		SKU		Min	Pkg
Avnet	2	FDV303N	648,000	3K						0.027	5h
Newark	2	FDV303N	58,291	1	Cut Tape	0.037	0.037	0.037	0.037	0.037
Verical	4	FDV303N	12,299	8523						0.039
Arrow Electronics	2	FDV303N	13,260	1		0.295	0.188	0.115	0.074	0.064
Future Electronics	2	FDV303N	3,219,000	3K	Tape & Reel					0.025

재고 내역

3개월 추세: +4.37%

CAD 모델

심볼, 풋프린트 및 3D STEP 다운로드

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데이터시트 및 문서

onsemi FDV303N에 대한 데이터시트 및 제조업체 설명서를 다운로드하세요.

IHS

Datasheet8 페이지6년 전

Datasheet0 페이지0년 전

Master Electronics

Upverter

TME

onsemi

재고 내역

3개월간의 트렌드:

+4.37%

CAD 모델

신뢰할 수 있는 파트너로부터 onsemi FDV303N 심벌, 풋프린트 및 3D STEP 모델을 다운로드하세요.

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공급망

Lifecycle StatusProduction (Last Updated: 5 years ago)

Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

설명

유통업체에서 제공한 onsemi FDV303N에 대한 설명입니다.

TRANSISTOR, DIGITAL FET, N-CHANNEL, MOSFET, 25V, 0.68A, 0.35W, SOT-23

RS (Formerly Allied Electronics)

Power MOSFET, N Channel, 25 V, 680 mA, 0.45 ohm, SOT-23, Surface Mount

Avnet Silica

DIGITAL FET, N-CHANNEL Small Signal Field-Effect Transistor, 0.68A I(D), 25V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

ComSIT Distribution GmbH

MOSFET, N DIGITAL SOT-23; Transistor Polarity: N Channel; Continuous Drain Current Id: 680mA; Drain Source Voltage Vds: 25V; On Resistance Rds(on): 0.6ohm; Rds(on) Test Voltage Vgs: 2.7V; Threshold Voltage Vgs: -; Power Dissip

Farnell

Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) mA = 680 / Drain-Source Voltage (Vds) V = 25 / ON Resistance (Rds(on)) mOhm = 600 / Gate-Source Voltage V = 8 / Fall Time ns = 13 / Rise Time ns = 8.5 / Turn-OFF Delay Time ns = 17 / Turn-ON Delay Time ns = 3 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) mW = 350

Distrelec

These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize on-state resistance at low gate drive conditions. This device is designed especially for application in battery circuits using either one lithium or three cadmium or NMH cells. It can be used as an inverter or for high-efficiency miniature discrete DC/DC conversion in compact portable electronic devices like cellular phones and pagers. This device has excellent on-state resistance even at gate drive voltages as low as 2.5 volts.

Fairchild Semiconductor

MOSFET, N, SOT-23, 25V, 680MA; Transistor Polarity:N Channel; Continuous Drain Current Id:680mA; Drain Source Voltage Vds:25V; On Resistance Rds(on):600mohm; Rds(on) Test Voltage Vgs:2.7V; Threshold Voltage Vgs Typ:800mV; Power Dissipation Pd:350mW; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:680mA; Current Temperature:25°C; ESD HBM:6kV; External Depth:2.5mm; External Length / Height:1.12mm; External Width:3.05mm; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:SOT-23; Power Dissipation Pd:350mW; Power Dissipation Pd:350mW; Pulse Current Idm:2A; SMD Marking:303; Tape Width:8mm; Termination Type:SMD; Voltage Vds Typ:25V; Voltage Vgs Max:800mV; Voltage Vgs Rds on Measurement:4.5V; Voltage Vgs th Max:1.5V

element14 APAC