대체 부품
Price @ 1000
$ 0.099
$ 0.334
Stock
241,403
13,523,788
Authorized Distributors
3
4
Mount
Surface Mount
Surface Mount
Case/Package
TO-236-3
SOT-23
Drain to Source Voltage (Vdss)
-20 V
-20 V
Continuous Drain Current (ID)
780 mA
540 mA
Threshold Voltage
-
-1.5 V
Rds On Max
600 mΩ
600 mΩ
Gate to Source Voltage (Vgs)
12 V
12 V
Power Dissipation
540 mW
540 mW
Input Capacitance
97 pF
97 pF
공급망
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.21.00.95
Introduction Date2008-07-23
Lifecycle StatusObsolete (Last Updated: 5 months ago)
LTB Date2019-10-15
LTD Date2020-04-15
관련 부품
InfineonIRLML2402GTRPBF
MOSFET, 20V, 1.2A, 250 MOHM, 2.6 NC QG, LOGIC LEVEL, SOT-23, HALOGEN-FREE
InfineonIRLML2402TRPBF
MOSFET, Power;N-Ch;VDSS 20V;RDS(ON) 0.25Ohm;ID 1.2A;Micro3;PD 540mW;VGS +/-12V
NXP SemiconductorsPMV170UN,215
325mW(Ta),1.14W(Tc) 8V 1V@ 250¦ÌA 1.65nC@ 4.5 V 1N 20V 165m¦¸@ 1A,4.5V 83pF@10V SOT-23,TO-236AB
설명
유통업체에서 제공한 Infineon IRLML6302GTRPBF에 대한 설명입니다.
Trans MOSFET P-CH 20V 0.78A 3-Pin SOT-23 T/R / MOSFET P-CH 20V 0.78A SOT-23-3
-20V Single N-Channel Lead Free HEXFET Power MOSFET in a Halogen Free Micro3 package, SOT23-3, RoHS
Infineon SCT
Single P-Channel 20 V 540 mW 3.6 nC Surface Mount Hexfet Power Mosfet - Micro3
Small Signal Field-Effect Transistor, 0.78A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageTO-236-3
MountSurface Mount
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)780 mA
Drain to Source Breakdown Voltage-20 V
Drain to Source Resistance600 mΩ
Drain to Source Voltage (Vdss)-20 V
Element ConfigurationSingle
Fall Time22 ns
Gate to Source Voltage (Vgs)12 V
Input Capacitance97 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation540 mW
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance60 mΩ
Package Quantity3000
PackagingTape & Reel
Power Dissipation540 mW
Rds On Max600 mΩ
Resistance600 mΩ
Rise Time18 ns
Turn-Off Delay Time22 ns
Turn-On Delay Time13 ns
Dimensions
Height1.12 mm
Length3.04 mm
Width1.4 mm
규정 준수
환경 분류
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
규정 준수 정책